Silicon Carbide Substrate Grinding and Polishing

JIZHI Electronics · Silicon Carbide Grinding and Polishing · Semiconductor Wafer Polishing

Silicon Carbide Grinding Slurry / Silicon Carbide Polishing Slurry / Silicon Carbide (SiC) Lapping Pad / SiC Final Polishing Pad

Key Features

  • Domestic Alternatives to Politex and FUJIBO Polishing Pads

Product Name

JIZHI Electronics · Silicon Carbide Grinding and Polishing · Semiconductor Wafer Polishing

Product Features

JIZHI Electronics has developed a four-step SiC polishing process that combines different grades of grinding slurries, polishing slurries, and polishing pads (coarse grinding pad, fine grinding pad, rough polishing pad, and final polishing pad). This process improves the surface quality of silicon carbide substrates in grinding and polishing applications while significantly increasing the material removal rate.

Process and Applications

Suitable for SiC silicon carbide substrate DMP and CMP process flows, effectively improving efficiency and yield. The silicon carbide polishing slurries and polishing pads enable localized (domestic) replacement of imported products.

Brief Overview of the Silicon Carbide Substrate Processing Flow

Silicon Carbide (SiC) Grinding Process – Rough Grinding / Fine Grinding

Step1
JIZHI Electronics Silicon Carbide (SiC) Rough Grinding Process

SiC Double-Sided Rough Grinding Process
Verification Equipment 双面36B
Wafer 6″SiC
Polishing Slurry JZ-8003
Polishing Pad JZ-1020
Pressure 3 psi
Upper Platen Rotation Speed 25 rpm
Lower Platen Rotation Speed 10 rpm
Slurry Flow Rate 5L /min
Polishing Rate 25-30um/H
Surface Roughness 1.22nm
TTV (Total Thickness Variation) <2
Warp <30
Bow <10
Rough Grinding · Used with Lapping Pad
Lapping Pad Dimensions and Specifications
Model JZ-1020
Thickness 1.4 mm
Groove Pattern Customizable
Hardness Shore A 85°
Compression Ratio 2.92

Step2
JIZHI Electronics Silicon Carbide (SiC) Fine Grinding Process

SiC Double-Sided Rough Grinding Process
Verification Equipment 双面36B
Wafer 6″SiC
Polishing Slurry JZ-8001
Polishing Pad JZ-1020
Pressure 3 psi
Upper Platen Rotation Speed 25 rpm
Lower Platen Rotation Speed 10 rpm
Slurry Flow Rate 5L /min
Polishing Rate 6.8um/H
Surface Roughness 0.45nm
TTV (Total Thickness Variation) <2
Warp <30
Bow <20
ine Grinding · Used with Lapping Pad
Lapping Pad Dimensions and Specifications
Model JZ-1020
Thickness 1.4 mm
Groove Pattern Customizable
Hardness Shore A 85°
Compression Ratio 2.92

JIZHI Electronics’ CMP rough and fine grinding process for SiC substrates

Tip 1 – Using rough grinding slurry with a lapping pad, Ra can reach 1.22 nm or lower.
Tip 2 – Using fine grinding slurry with a lapping pad, Ra can reach 0.45 nm or lower.

Silicon Carbide (SiC) Polishing Process – Rough Polishing / Fine Polishing

Step3
JIZHI Electronics Silicon Carbide (SiC) Rough Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment 双面36B
Wafer 6″SiC
Polishing Slurry JZ-8010
Polishing Pad JZ-3020
Pressure 350g/cm2
Rotation Speed 40 rpm
Polishing Rate 2.5um/H
Surface Roughness 0.13nm
Rough Polishing Pad Dimensions and Specifications
Model JZ-3020
Thickness 1.4 mm
Groove Pattern Customizable
Hardness Shore A 85°
Compression Ratio 2.94

Step4
JIZHI Electronics Silicon Carbide (SiC) Final Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment 双面36B
Wafer 6″SiC
Polishing Slurry JZ-8020
Polishing Pad JZ-326
Pressure 300g/cm2
Rotation Speed 40 rpm
Polishing Rate 0.25um/H
Surface Roughness 0.06nm
Rough Polishing Pad Dimensions and Specifications
Model JZ-326
Thickness 1.3 mm
Groove Pattern Customizable
Hardness Shore A 51°
Compression Ratio 10.77

JIZHI Electronics’ CMP rough and final polishing process for SiC substrates

Tip 3 – Using rough polishing slurry with a lapping pad, Ra can reach 0.13 nm or lower.
Tip 4 – Using final polishing slurry with a final polishing pad, Ra can reach 0.06 nm or lower.

Recommended Products and Parameters for Silicon Carbide Grinding / Polishing Processes

Processing Method Recommended Products Removal Rate Surface Quality
Polishing Slurry Polishing Pad
Final Polishing Grinding / Lapping JZ-8003 JZ-1020 25-30um/H 1.22nm
Final Polishing JZ-8001 JZ-1020 6.8um/H 0.45nm
Polishing Rough Polishing JZ-8010 JZ-3020 2.5um/H 0.13nm
Final Polishing JZ-8020A
JZ-8020B
JZ-326 0.25um/H 0.06nm

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry

Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5–35 °C, protected from direct sunlight and from freezing. If stored below 0 °C, irreversible agglomeration may occur, rendering the product unusable.

Pricing of JIZHI Electronics CMP / Slurry Polishing Liquids

JIZHI Electronics’ CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics’ polishing slurries is comparable to that of similar imported products.

Thanks to localized production, JIZHI Electronics’ CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.

Why choose Jizhi Electronics?

  • 10 years of experience in optical material CMP

    10 years of experience in optical material CMP

  • Polishing solutions and formulas are flexibly customized

    Non-toxic, biodegradable formula meeting internati

  • Free process debugging

    40% faster processing time compared to conventiona

  • Introduce foreign production technologies and equipment

    Optimized consumption rate reduces overall operati