{"id":1885,"date":"2026-04-22T11:10:53","date_gmt":"2026-04-22T03:10:53","guid":{"rendered":"https:\/\/jeez-semicon.com\/?post_type=semiconductor&p=1885"},"modified":"2026-04-22T13:50:09","modified_gmt":"2026-04-22T05:50:09","slug":"silicon-carbide-substrate-grinding-slurry","status":"publish","type":"semiconductor","link":"https:\/\/jeez-semicon.com\/de\/semiconductor\/silicon-carbide-substrate-grinding-slurry\/","title":{"rendered":"Siliziumkarbid-Substrat-Schleifsuspension"},"content":{"rendered":"

Produktkategorie<\/strong><\/h2>\n\n\n\n

JIZHI Electronics \u2013 Silicon Carbide Grinding \/ Semiconductor Wafer Polishing<\/p>\n\n\n\n

Produktmerkmale<\/strong><\/h2>\n\n\n\n

JIZHI Electronics provides two-stage polishing process solutions for silicon carbide (SiC), combining different models of grinding slurries and polishing pads (rough grinding pad \/ fine grinding pad \/ rough polishing pad \/ fine polishing pad). This approach improves the surface quality of SiC substrates during grinding while significantly increasing the material removal rate.<\/p>\n\n\n\n

Verfahren und Anwendungen<\/strong><\/h2>\n\n\n\n

Suitable for DMP and CMP processes of SiC substrates, effectively improving efficiency and yield. SiC grinding slurries and polishing pads enable domestic substitution for imported products.<\/p>\n\n\n\n

Kurzer \u00dcberblick \u00fcber den Verarbeitungsprozess von Siliziumkarbid-Substraten<\/strong><\/h2>\n\n\n\n
\"\"<\/figure>\n\n\n\n

Siliziumkarbid (SiC) Schleifprozess - Grobschleifen \/ Feinschleifen<\/strong><\/h2>\n\n\n\n

Stufe1<\/strong>
JIZHI Electronics Siliziumkarbid (SiC) Grobschleifverfahren<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Beidseitiges Grobschleifverfahren<\/th>\n <\/tr>\n <\/thead>\n
Ausr\u00fcstung f\u00fcr die Verifizierung<\/td>\n double-sided36B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6\u2033SiC<\/td>\n <\/tr>\n
Polierschl\u00e4mme<\/td>\n JZ-8003<\/td>\n <\/tr>\n
Polierkissen<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Druck<\/td>\n 3 psi<\/td>\n <\/tr>\n
Rotationsgeschwindigkeit der oberen Walze<\/td>\n 25 Umdrehungen pro Minute<\/td>\n <\/tr>\n
Rotationsgeschwindigkeit der unteren Platte<\/td>\n 10 Umdrehungen pro Minute<\/td>\n <\/tr>\n
Durchsatz der G\u00fclle<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polierrate<\/td>\n 25-30um\/H<\/td>\n <\/tr>\n
Oberfl\u00e4chenrauhigkeit<\/td>\n 1,22nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bogen<\/td>\n <10<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n Grobschleifen - Verwendung mit L\u00e4ppkissen\n <\/th>\n <\/tr>\n
\n Abmessungen und Spezifikationen der L\u00e4ppscheibe\n <\/th>\n <\/tr>\n <\/thead>\n\n
Modell<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Dicke<\/td>\n 1,4 mm<\/td>\n <\/tr>\n
Rillenmuster<\/td>\n Anpassbar<\/td>\n <\/tr>\n
H\u00e4rte<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
Verdichtungsverh\u00e4ltnis<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

Stufe2<\/strong>
JIZHI Electronics Siliziumkarbid (SiC) Feinschleifverfahren<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Beidseitiges Grobschleifverfahren<\/th>\n <\/tr>\n <\/thead>\n
Ausr\u00fcstung f\u00fcr die Verifizierung<\/td>\n double-sided36B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6\u2033SiC<\/td>\n <\/tr>\n
Polierschl\u00e4mme<\/td>\n JZ-8001<\/td>\n <\/tr>\n
Polierkissen<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Druck<\/td>\n 3 psi<\/td>\n <\/tr>\n
Rotationsgeschwindigkeit der oberen Walze<\/td>\n 25 Umdrehungen pro Minute<\/td>\n <\/tr>\n
Rotationsgeschwindigkeit der unteren Platte<\/td>\n 10 Umdrehungen pro Minute<\/td>\n <\/tr>\n
Durchsatz der G\u00fclle<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polierrate<\/td>\n 6,8 um\/H<\/td>\n <\/tr>\n
Oberfl\u00e4chenrauhigkeit<\/td>\n 0,45nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bogen<\/td>\n <20<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n ine Schleifen - verwendet mit L\u00e4ppscheibe\n <\/th>\n <\/tr>\n
\n Abmessungen und Spezifikationen der L\u00e4ppscheibe\n <\/th>\n <\/tr>\n <\/thead>\n\n
Modell<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Dicke<\/td>\n 1,4 mm<\/td>\n <\/tr>\n
Rillenmuster<\/td>\n Anpassbar<\/td>\n <\/tr>\n
H\u00e4rte<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
Verdichtungsverh\u00e4ltnis<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

JIZHI Electronics\u2019 CMP Grob- und Feinschleifverfahren f\u00fcr SiC-Substrate<\/strong><\/h2>\n\n\n\n

Tipp 1 - Bei Verwendung einer groben Schleifsuspension mit einem L\u00e4ppkissen kann Ra 1,22 nm oder weniger erreichen.
Tipp 2 - Bei Verwendung einer feinen Schleifsuspension mit einem L\u00e4ppkissen kann Ra 0,45 nm oder weniger erreichen.<\/p>\n\n\n\n

Empfohlene Produkte und Parameter f\u00fcr Siliziumkarbid-Schleif-\/Polierprozesse<\/strong><\/h2>\n\n\n\n\n \n \n \n \n \n \n
\n Verfahren\n <\/th>\n \n Empfohlene Produkte\n <\/th>\n \n Entfernungsrate\n <\/th>\n \n Qualit\u00e4t der Oberfl\u00e4che\n <\/th>\n <\/tr>\n \n \n
<\/th>\n \n Polierschl\u00e4mme\n <\/th>\n \n Polierkissen\n <\/th>\n <\/tr>\n \n \n
\n Endpolitur\n <\/td>\n Schleifen \/ L\u00e4ppen<\/td>\n JZ-8003<\/td>\n JZ-1020<\/td>\n 25-30um\/H<\/td>\n 1,22nm<\/td>\n <\/tr>\n \n \n
Endpolitur<\/td>\n JZ-8001<\/td>\n JZ-1020<\/td>\n 6,8 um\/H<\/td>\n 0,45nm<\/td>\n <\/tr>\n \n <\/table>\n\n\n\n

Lagerungsmethode f\u00fcr JIZHI Electronics SiC Siliziumkarbid-Polierschlamm<\/h2>\n\n\n\n

In einem gut bel\u00fcfteten, k\u00fchlen und trockenen Lagerhaus aufbewahren. Das Produkt muss bei 5-35 \u00b0C gelagert werden und vor direkter Sonneneinstrahlung und Frost gesch\u00fctzt werden. Bei Lagerung unter 0 \u00b0C kann es zu irreversibler Agglomeration kommen, wodurch das Produkt unbrauchbar wird.<\/p>\n\n\n\n

Preisgestaltung von JIZHI Electronics CMP \/ Slurry Polierfl\u00fcssigkeiten<\/h2>\n\n\n\n

Die CMP-Metallpolierschl\u00e4mme von JIZHI Electronics werden mit fortschrittlichen Produktionstechnologien und -anlagen in \u00dcbersee hergestellt und mit speziellen chemischen Zusammensetzungen formuliert. Die Qualit\u00e4t der Polierschl\u00e4mme von JIZHI Electronics ist vergleichbar mit der von \u00e4hnlichen importierten Produkten.<\/p>\n\n\n\n

Dank der lokalen Produktion bieten die CMP-Slurries von JIZHI Electronics kurze Lieferzeiten, eine stabile, hohe Qualit\u00e4t und wettbewerbsf\u00e4hige, kosteng\u00fcnstige Preise.<\/p>\n\n\n\n

<\/p>","protected":false},"excerpt":{"rendered":"

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