{"id":2464,"date":"2026-07-16T13:17:51","date_gmt":"2026-07-16T05:17:51","guid":{"rendered":"https:\/\/jeez-semicon.com\/?p=2464"},"modified":"2026-07-16T13:29:36","modified_gmt":"2026-07-16T05:29:36","slug":"colloidal-silica-vs-ceria-abrasive-oxide-cmp-selection-guide","status":"publish","type":"post","link":"https:\/\/jeez-semicon.com\/es\/blog\/colloidal-silica-vs-ceria-abrasive-oxide-cmp-selection-guide\/","title":{"rendered":"Colloidal Silica vs. Ceria Abrasive in Oxide CMP: A Practical Selection Guide"},"content":{"rendered":"<p><style>\r\n\/* JEEZ Oxide CMP Cluster Article | Jizhi Electronic Technology Co., Ltd. | jeez-semicon.com *\/\r\n#jeez-ocmp *, #jeez-ocmp *::before, #jeez-ocmp *::after { box-sizing: border-box; }\r\n#jeez-ocmp { font-family: 'Inter', system-ui, -apple-system, sans-serif; font-size: 1rem; line-height: 1.78; color: #1E293B; max-width: 100%; }\r\n#jeez-ocmp h1 { font-family: 'Syne', sans-serif; font-size: clamp(1.75rem, 5vw, 2.875rem); font-weight: 800; line-height: 1.12; 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padding: 1.125rem 1.25rem; background: #F5F8FF; display: block; margin: 0; border-bottom: 1px solid #E2EAF4; line-height: 1.45; }\r\n.ocmp-faq-a { padding: 1rem 1.25rem; font-size: 0.9rem; color: #334155; margin: 0; line-height: 1.72; }\r\n.ocmp-hr { border: none; border-top: 1px solid #E2EAF4; margin: 2.5rem 0; }\r\n@media (max-width: 640px) {\r\n  .ocmp-compare { grid-template-columns: 1fr; }\r\n  .ocmp-toc ol { grid-template-columns: 1fr; }\r\n  #jeez-ocmp h2 { margin-top: 2.25rem; }\r\n}\r\n<\/style><\/p>\r\n<article id=\"jeez-ocmp\">\r\n<div class=\"ocmp-meta\">\ud83d\udcc5 July 2026\u00b7\u23f1 16 min read\u00b7\u270d\ufe0f JEEZ Technical Team<\/div>\r\n<p class=\"ocmp-lead\">Choosing between colloidal silica and ceria abrasive is the single most important formulation decision in oxide CMP. The two systems differ in removal mechanism, achievable selectivity, defect profile, cleaning requirements, and supply chain characteristics \u2014 and no single abrasive is suitable for all oxide CMP applications. This guide provides a definitive technical and commercial comparison to help engineers select the right abrasive for their specific application. For a full overview of oxide CMP slurry types and applications, see our <a href=\"https:\/\/jeez-semicon.com\/es\/blog\/oxide-cmp-slurry\/\" target=\"_blank\" rel=\"noopener noreferrer\">Oxide CMP Slurry: Complete Technical Guide<\/a>.<\/p>\r\n<nav class=\"ocmp-toc\" aria-label=\"\u00cdndice\">\r\n<p class=\"ocmp-toc-title\">\u00cdndice<\/p>\r\n<ol>\r\n<li><a href=\"#abr-intro\">Two Abrasive Systems, Two Applications<\/a><\/li>\r\n<li><a href=\"#abr-silica\">Colloidal Silica: Properties &amp; Strengths<\/a><\/li>\r\n<li><a href=\"#abr-ceria\">Ceria: Properties &amp; Strengths<\/a><\/li>\r\n<li><a href=\"#abr-compare\">Head-to-Head Comparison Table<\/a><\/li>\r\n<li><a href=\"#abr-select\">Application-Specific Selection Guide<\/a><\/li>\r\n<li><a href=\"#abr-supply\">Cost &amp; Supply Chain Considerations<\/a><\/li>\r\n<li><a href=\"#abr-faq\">Preguntas frecuentes<\/a><\/li>\r\n<\/ol>\r\n<\/nav>\r\n<h2 id=\"abr-intro\">Two Abrasive Systems, Two Applications<\/h2>\r\n<p>Colloidal silica and ceria represent two fundamentally different approaches to SiO<sub>2<\/sub> removal. Colloidal silica relies on a predominantly mechanical removal mechanism enhanced by alkaline chemical softening \u2014 the chemistry is the enabler, but particle-surface contact mechanics drive most of the removal. Ceria relies on a chemical tooth-gear mechanism \u2014 Ce\u2013O\u2013Si bond formation at the particle-surface interface \u2014 that is so chemically specific to SiO<sub>2<\/sub> that it inherently discriminates against Si<sub>3<\/sub>N<sub>4<\/sub> removal.<\/p>\r\n<p>This fundamental difference in mechanism determines everything downstream: the selectivity each system can achieve, the defect types each generates, the cleaning chemistry each requires, and the supply chain risks each carries. In practice, most semiconductor fabs use <em>both<\/em> abrasive systems \u2014 colloidal silica for BEOL ILD applications where defectivity and surface finish are paramount, and ceria for FEOL STI applications where stop-on-nitride selectivity is non-negotiable. Understanding why each abrasive excels in its application, and where each falls short, is essential for any CMP process engineer.<\/p>\r\n<h2 id=\"abr-silica\">Colloidal Silica: Properties &amp; Strengths<\/h2>\r\n<p>Colloidal silica for CMP is synthesized from silicon alkoxide precursors (St\u00f6ber process) or by ion exchange of sodium silicate solutions, producing amorphous SiO<sub>2<\/sub> particles in the 20\u2013100 nm size range. The synthesis process enables tight control of particle size distribution (PSD), particle morphology (near-spherical), and surface chemistry.<\/p>\r\n<h3>Removal Mechanism<\/h3>\r\n<p>At the alkaline pH (10\u201311) used in ILD CMP, colloidal silica removal is primarily driven by the mechanical abrasion of SiO<sub>2<\/sub> surfaces that have been chemically softened by Si\u2013O bond hydrolysis. The alkaline solution converts the SiO<sub>2<\/sub> surface to a weak hydrated silica gel layer (~1\u20135 nm thick) that is easily displaced by abrasive particle contact. The rate of chemical softening increases with pH, which is why ILD slurries use KOH or NH<sub>4<\/sub>OH to maintain strongly alkaline conditions.<\/p>\r\n<h3>Key Advantages of Colloidal Silica<\/h3>\r\n<ul>\r\n<li><strong>Low defectivity:<\/strong> Softer particle hardness (Mohs ~5.5) and spherical morphology minimize micro-scratch risk. Well-formulated colloidal silica ILD slurry delivers scratch densities below 0.02\/cm\u00b2 at production conditions.<\/li>\r\n<li><strong>Excellent surface finish:<\/strong> Post-CMP SiO<sub>2<\/sub> surface roughness (Ra) below 0.15 nm is routinely achievable with colloidal silica, meeting damascene via-bottom roughness requirements at advanced nodes.<\/li>\r\n<li><strong>Colloidal stability:<\/strong> Strong negative surface charge (zeta potential \u201320 to \u201340 mV at pH 10\u201311) provides electrostatic stabilization, enabling shelf life of 6\u201312 months without agglomeration.<\/li>\r\n<li><strong>Simple post-CMP cleaning:<\/strong> Standard SC-1 alkaline chemistry (NH<sub>4<\/sub>OH:H<sub>2<\/sub>O<sub>2<\/sub>:H<sub>2<\/sub>O) with PVA brush scrubbing is effective for silica particle removal, without the specialized acid clean chemistry required for ceria.<\/li>\r\n<li><strong>Diversified supply chain:<\/strong> Colloidal silica is produced by multiple suppliers globally (Evonik, Nalco, Fuso, AGC, and others), providing supply redundancy and competitive pricing.<\/li>\r\n<li><strong>CMOS process compatibility:<\/strong> NH<sub>4<\/sub>OH-formulated colloidal silica slurry avoids potassium ion contamination risk, making it compatible with CMOS gate dielectric environments.<\/li>\r\n<\/ul>\r\n<h3>Limitations of Colloidal Silica<\/h3>\r\n<p>The primary limitation of colloidal silica for oxide CMP is selectivity: SiO<sub>2<\/sub>:Si<sub>3<\/sub>N<sub>4<\/sub> selectivity of only 5:1 to 15:1 is achievable, which is adequate for ILD applications but wholly insufficient for STI CMP. For ILD applications at advanced nodes involving exposed low-k dielectrics, abrasive contact from colloidal silica can also damage porous ULK films, requiring careful slurry formulation and application of low-pressure recipes.<\/p>\r\n<h2 id=\"abr-ceria\">Ceria: Properties &amp; Strengths<\/h2>\r\n<p>CMP-grade cerium oxide (CeO<sub>2<\/sub>) particles are synthesized by high-temperature calcination of cerium carbonate or nitrate precursors followed by precision wet milling. Particle sizes for CMP typically range from 80\u2013200 nm, with D99 specifications below 500 nm being critical for scratch control. The most important quality differentiator in ceria is the surface Ce<sup>3+<\/sup>\/Ce<sup>4+<\/sup> ratio, which determines the density of active sites for Ce\u2013O\u2013Si bond formation.<\/p>\r\n<h3>Removal Mechanism<\/h3>\r\n<p>Ceria polishes SiO<sub>2<\/sub> primarily through the chemical tooth-gear mechanism: Ce<sup>3+<\/sup> surface sites form Ce\u2013O\u2013Si bridging bonds with SiO<sub>2<\/sub> surface hydroxyls, and the strong Ce\u2013O\u2013Si bond enables mechanical detachment of SiO<sub>2<\/sub> surface units at much lower applied pressures than silica abrasion requires. Si<sub>3<\/sub>N<sub>4<\/sub> surfaces do not present accessible Si\u2013OH groups for Ce\u2013O\u2013Si bonding, so they experience only the weak mechanical abrasion component \u2014 creating the inherent selectivity advantage of ceria over silica.<\/p>\r\n<h3>Key Advantages of Ceria<\/h3>\r\n<ul>\r\n<li><strong>High SiO<sub>2<\/sub>:Si<sub>3<\/sub>N<sub>4<\/sub> selectivity:<\/strong> Up to 200:1 with optimized PAA additive packages \u2014 the only abrasive capable of meeting STI requirements at advanced nodes.<\/li>\r\n<li><strong>Higher oxide MRR per unit concentration:<\/strong> Ceria removes SiO<sub>2<\/sub> 3\u20135\u00d7 more efficiently per unit weight than silica, enabling effective polishing at 0.5\u20132 wt% vs. 5\u201315 wt% for silica.<\/li>\r\n<li><strong>Superior stop-on-nitride capability:<\/strong> Combined with PAA additives, ceria allows precise termination of polishing at the Si<sub>3<\/sub>N<sub>4<\/sub> surface, enabling sub-nanometer nitride loss control.<\/li>\r\n<li><strong>Good planarization efficiency:<\/strong> The chemical-mechanical balance of ceria polishing produces good planarization of narrow and medium-width features (reduced dishing vs. mechanical-only abrasion).<\/li>\r\n<\/ul>\r\n<h3>Limitations of Ceria<\/h3>\r\n<p>Ceria&#8217;s higher hardness (Mohs ~6) and greater tendency to form aggregates create elevated micro-scratch risk compared to colloidal silica. Post-CMP ceria residue \u2014 particles that form Ce\u2013O\u2013Si bonds with polished surfaces and resist standard rinse cleaning \u2014 is a major process integration challenge requiring specialized acid-based cleaning chemistry. Supply chain concentration in Chinese rare earth production also creates geopolitical risk for global fabs.<\/p>\r\n<h2 id=\"abr-compare\">Head-to-Head Comparison Table<\/h2>\r\n<div class=\"ocmp-table-wrap\">\r\n<table>\r\n<thead>\r\n<tr>\r\n<th>Par\u00e1metro<\/th>\r\n<th>Colloidal Silica<\/th>\r\n<th>Ceria (CeO\u2082)<\/th>\r\n<\/tr>\r\n<\/thead>\r\n<tbody>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Removal Mechanism<\/td>\r\n<td>Mechanical abrasion + alkaline chemical softening<\/td>\r\n<td>Ce\u2013O\u2013Si chemical tooth-gear + mechanical<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Abrasive Concentration<\/td>\r\n<td>5\u201315 wt%<\/td>\r\n<td>0.5\u20132 wt%<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Process pH<\/td>\r\n<td>10\u201311 (alkaline)<\/td>\r\n<td>5\u20138 (mildly acidic to neutral)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">SiO<sub>2<\/sub> MRR<\/td>\r\n<td>1,000\u20133,000 \u00c5\/min<\/td>\r\n<td>1,500\u20134,000 \u00c5\/min<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">SiO<sub>2<\/sub>:Si<sub>3<\/sub>N<sub>4<\/sub> Selectividad<\/td>\r\n<td>5:1 to 15:1<\/td>\r\n<td>50:1 to 200:1 (with PAA)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Particle Hardness (Mohs)<\/td>\r\n<td>~5.5<\/td>\r\n<td>~6.0<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Scratch Risk<\/td>\r\n<td>Bajo<\/td>\r\n<td>Medium\u2013High (aggregation risk)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Rugosidad superficial<\/td>\r\n<td>Ra &lt;0.15 nm (excellent)<\/td>\r\n<td>Ra 0.15\u20130.30 nm (good)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Post-CMP Cleaning<\/td>\r\n<td>Standard SC-1, simple<\/td>\r\n<td>Requires dilute acid clean for ceria residue<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Colloidal Stability<\/td>\r\n<td>Excellent (6\u201312 months shelf life)<\/td>\r\n<td>Good (3\u20136 months; settling risk)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Supply Chain Risk<\/td>\r\n<td>Low (diversified global supply)<\/td>\r\n<td>Medium\u2013High (concentrated rare earth supply)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Unit Cost<\/td>\r\n<td>Lower (per kg abrasive)<\/td>\r\n<td>Higher (rare earth feedstock premium)<\/td>\r\n<\/tr>\r\n<tr>\r\n<td class=\"ocmp-td-label\">Primary Application<\/td>\r\n<td>ILD oxide CMP (BEOL)<\/td>\r\n<td>STI CMP (FEOL)<\/td>\r\n<\/tr>\r\n<\/tbody>\r\n<\/table>\r\n<\/div>\r\n<h2 id=\"abr-select\">Application-Specific Selection Guide<\/h2>\r\n<div class=\"ocmp-compare\">\r\n<div class=\"ocmp-compare-col blue\">\r\n<p class=\"ocmp-compare-col-title\">Choose Colloidal Silica When:<\/p>\r\n<ul>\r\n<li>Polishing ILD oxide between metal layers (BEOL)<\/li>\r\n<li>No hard stop layer is present (timed endpoint)<\/li>\r\n<li>Surface finish below Ra 0.15 nm is required<\/li>\r\n<li>Low-k or ULK dielectric is exposed during polish<\/li>\r\n<li>Post-CMP cleaning resources are limited (standard SC-1 only)<\/li>\r\n<li>Metal ion (K<sup>+<\/sup>) control is critical<\/li>\r\n<li>Supply chain diversification is a priority<\/li>\r\n<\/ul>\r\n<\/div>\r\n<div class=\"ocmp-compare-col teal\">\r\n<p class=\"ocmp-compare-col-title\">Choose Ceria When:<\/p>\r\n<ul>\r\n<li>Polishing STI oxide to a Si<sub>3<\/sub>N<sub>4<\/sub> stop layer (FEOL)<\/li>\r\n<li>SiO<sub>2<\/sub>:Si<sub>3<\/sub>N<sub>4<\/sub> selectivity above 30:1 is required<\/li>\r\n<li>Sub-nanometer nitride loss control is mandatory<\/li>\r\n<li>FinFET fin height uniformity is being controlled<\/li>\r\n<li>3D NAND oxide\/nitride stack CMP is the application<\/li>\r\n<li>Specialized post-CMP cleaning infrastructure is available<\/li>\r\n<\/ul>\r\n<\/div>\r\n<\/div>\r\n<h2 id=\"abr-supply\">Cost &amp; Supply Chain Considerations<\/h2>\r\n<p>At the unit price level, CMP-grade colloidal silica costs significantly less per kilogram than CMP-grade ceria. However, the total cost of ownership comparison is more nuanced: ceria&#8217;s higher per-particle removal efficiency means that a 1 wt% ceria slurry can outperform a 12 wt% silica slurry on oxide MRR, so the slurry cost per wafer polished is more competitive than unit price comparisons suggest. Additionally, the specialized post-CMP cleaning required for ceria residue adds cleaning chemical and tool time costs that should be included in any total cost comparison.<\/p>\r\n<p>On supply chain, colloidal silica is produced by multiple suppliers across multiple geographies \u2014 Japan, Germany, the United States, and China \u2014 providing genuine supply redundancy. Ceria feedstock (cerium carbonate) is dominated by Chinese rare earth production, with Chinese producers controlling approximately 70\u201380% of global cerium supply. This concentration creates supply continuity risk that some fabs manage through strategic inventory buildup, dual-sourcing from cerium processors in different supply chains, or qualification of alternative high-selectivity slurry formulations using synthetic mixed-oxide abrasives under development by several specialty chemical companies as of 2026.<\/p>\r\n<p>For a detailed evaluation of each abrasive in its respective application, see our dedicated articles: <a href=\"https:\/\/jeez-semicon.com\/es\/blog\/ILD-Oxide-CMP-Slurry-TEOS-Planarization-Process-Slurry-Selection-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">ILD Oxide CMP Slurry: TEOS Planarization Process Guide<\/a> y <a href=\"https:\/\/jeez-semicon.com\/es\/blog\/STI-CMP-Slurry-Ceria-Chemistry-SiO2-Si3N4-Selectivity-Advanced-Node-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">STI CMP Slurry: Ceria Chemistry &amp; Selectivity Guide<\/a>.<\/p>\r\n<div class=\"ocmp-back\">\u2190 Part of the JEEZ Oxide CMP Slurry series. Return to the <a href=\"https:\/\/jeez-semicon.com\/es\/blog\/oxide-cmp-slurry\/\" target=\"_blank\" rel=\"noopener noreferrer\">Oxide CMP Slurry: Complete Technical &amp; Procurement Guide<\/a><\/div>\r\n<hr class=\"ocmp-hr\" \/>\r\n<h2 id=\"abr-faq\">Preguntas frecuentes<\/h2>\r\n<div class=\"ocmp-faq\">\r\n<div class=\"ocmp-faq-item\">\r\n<p class=\"ocmp-faq-q\">Can colloidal silica ever be used for STI CMP?<\/p>\r\n<p class=\"ocmp-faq-a\">Colloidal silica can be used for STI CMP at mature nodes (180 nm to 130 nm) where the nitride budget is large enough (10\u201320 nm loss acceptable) and the selectivity requirement is below ~15:1. However, for all advanced nodes below 90 nm, the tight nitride budget demands selectivity above 30:1 \u2014 achievable only with ceria. Using colloidal silica for STI at sub-45 nm nodes would result in unacceptable nitride loss and systematic transistor performance degradation.<\/p>\r\n<\/div>\r\n<div class=\"ocmp-faq-item\">\r\n<p class=\"ocmp-faq-q\">Why does ceria require specialized post-CMP cleaning?<\/p>\r\n<p class=\"ocmp-faq-a\">Ceria particles form Ce\u2013O\u2013Si bonds with SiO<sub>2<\/sub> surfaces during polishing. These bonds survive standard SC-1 alkaline cleaning because alkaline conditions actually favor Ce\u2013O\u2013Si bond stability. Effective ceria removal requires dilute acidic chemistry (citric acid or oxalic acid at pH 2\u20134), which competitively complexes Ce ions and breaks the Ce\u2013O\u2013Si surface bond, allowing particle detachment. Silica particles do not form chemical bonds with the polished surface and are removed by standard SC-1 plus brush scrubbing.<\/p>\r\n<\/div>\r\n<div class=\"ocmp-faq-item\">\r\n<p class=\"ocmp-faq-q\">Is there a single abrasive that can replace both colloidal silica and ceria?<\/p>\r\n<p class=\"ocmp-faq-a\">No commercially available single abrasive in 2026 can replace both. The application requirements are fundamentally different: ILD needs low defectivity and simple cleaning (favoring silica), while STI needs high selectivity and stop-on-nitride capability (requiring ceria). Several specialty chemical companies are developing alternative high-selectivity abrasive systems (including ceria-doped silica and synthetic composite abrasives), but none have achieved the production qualification breadth needed to replace ceria in STI at advanced nodes as of July 2026.<\/p>\r\n<\/div>\r\n<div class=\"ocmp-faq-item\">\r\n<p class=\"ocmp-faq-q\">Which abrasive is better for 3D NAND oxide CMP?<\/p>\r\n<p class=\"ocmp-faq-a\">3D NAND oxide\/nitride stack CMP (ONO stack planarization) uses ceria abrasive because each CMP step in the ONO stack must stop on or near the nitride surface. The selectivity requirement, while not as stringent as STI (nitride budget is larger), is still above 30:1 \u2014 achievable with ceria but not with standard colloidal silica ILD formulations. Some 3D NAND producers use modified ceria formulations with tuned selectivity specifically optimized for the stress state and composition of their specific ONO stack chemistry.<\/p>\r\n<\/div>\r\n<\/div>\r\n<\/article>\r\n<p><script type=\"application\/ld+json\">\r\n{\"@context\":\"https:\/\/schema.org\",\"@type\":\"FAQPage\",\"mainEntity\":[\r\n{\"@type\":\"Question\",\"name\":\"Can colloidal silica ever be used for STI CMP?\",\"acceptedAnswer\":{\"@type\":\"Answer\",\"text\":\"Colloidal silica can be used for mature node STI (180-130 nm) where nitride budget allows 10-20 nm loss. For advanced nodes below 90 nm, the tight nitride budget demands selectivity above 30:1, achievable only with ceria.\"}},\r\n{\"@type\":\"Question\",\"name\":\"Why does ceria require specialized post-CMP cleaning?\",\"acceptedAnswer\":{\"@type\":\"Answer\",\"text\":\"Ceria particles form Ce-O-Si bonds with SiO2 surfaces that survive standard SC-1 cleaning. Effective removal requires dilute acidic chemistry (citric or oxalic acid at pH 2-4) to complex Ce ions and break surface bonds. Silica particles do not form such bonds and are removed by standard SC-1 plus brush scrubbing.\"}},\r\n{\"@type\":\"Question\",\"name\":\"Is there a single abrasive that can replace both colloidal silica and ceria?\",\"acceptedAnswer\":{\"@type\":\"Answer\",\"text\":\"No commercially available single abrasive in 2026 can replace both. ILD needs low defectivity and simple cleaning (favoring silica); STI needs high selectivity (requiring ceria). Alternative systems are in development but have not achieved production-level qualification as of July 2026.\"}},\r\n{\"@type\":\"Question\",\"name\":\"Which abrasive is better for 3D NAND oxide CMP?\",\"acceptedAnswer\":{\"@type\":\"Answer\",\"text\":\"3D NAND ONO stack CMP uses ceria because each step must stop near the nitride surface, requiring selectivity above 30:1. Standard colloidal silica ILD formulations cannot meet this requirement.\"}}\r\n]}<\/script><\/p>","protected":false},"excerpt":{"rendered":"<p>\ud83d\udcc5 July 2026\u00b7\u23f1 16 min read\u00b7\u270d\ufe0f JEEZ Technical Team Choosing between colloidal silica and ceria abrasive is the single most important formulation decision in oxide CMP. The two systems differ  &#8230;<\/p>","protected":false},"author":1,"featured_media":2466,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[9,59],"tags":[],"class_list":["post-2464","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-blog","category-industry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/posts\/2464","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/comments?post=2464"}],"version-history":[{"count":3,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/posts\/2464\/revisions"}],"predecessor-version":[{"id":2494,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/posts\/2464\/revisions\/2494"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/media\/2466"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/media?parent=2464"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/categories?post=2464"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/es\/wp-json\/wp\/v2\/tags?post=2464"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}