What special properties are required for finishing pads when processing third-generation semiconductor materials like Gallium Nitride (GaN)?

Three special requirements must be met:

• Low-stress polishing: Elastic substrate modulus must match GaN’s brittle nature (fracture toughness < 2 MPa·m¹/²) to prevent micro-cracks

• Resistance to strong alkaline environments: PTFE-modified polyurethane enables stable operation > 200 hours in KOH-based slurries with pH > 12

• Enhanced thermal management: Thermal conductivity > 0.5 W/m·K for rapid dissipation of localized friction heat (GaN is temperature-sensitive)
  Jizhi Electronics’ GaN-specific pad series has been validated in 6-inch wafer mass production, with warpage control < 50 µm.