{"id":1917,"date":"2026-04-30T14:26:01","date_gmt":"2026-04-30T06:26:01","guid":{"rendered":"https:\/\/jeez-semicon.com\/?p=1917"},"modified":"2026-04-30T15:00:53","modified_gmt":"2026-04-30T07:00:53","slug":"cmp-slurry-types-applications-selection-guide","status":"publish","type":"post","link":"https:\/\/jeez-semicon.com\/fr\/blog\/cmp-slurry-types-applications-selection-guide\/","title":{"rendered":"Boues de CMP : Types, applications et guide de s\u00e9lection"},"content":{"rendered":"<!-- JEEZ | Cluster 1: CMP Slurry Types, Applications & Selection Guide -->\n<style>\n.jz*,.jz *::before,.jz *::after{box-sizing:border-box;margin:0;padding:0}\n.jz{font-family:'Segoe UI',Arial,sans-serif;font-size:16px;line-height:1.8;color:#1a1a2e;max-width:900px;margin:0 auto}\n.jz-hero{background:linear-gradient(135deg,#0f2544 0%,#1a4a8a 55%,#0e7c86 100%);border-radius:12px;padding:56px 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0}\n.jz-step{display:flex;gap:16px;margin-bottom:18px;align-items:flex-start}\n.jz-step-num{flex-shrink:0;width:34px;height:34px;background:linear-gradient(135deg,#1a4a8a,#0e7c86);color:#fff;font-size:.83em;font-weight:700;border-radius:50%;display:flex;align-items:center;justify-content:center}\n.jz-step-body p{margin-bottom:0;font-size:.94em}\n.jz-step-body strong{color:#0f2544}\n.jz-cta{background:linear-gradient(135deg,#0f2544 0%,#1a4a8a 60%,#0e7c86 100%);border-radius:12px;padding:44px 36px;text-align:center;margin:56px 0 36px;position:relative;overflow:hidden}\n.jz-cta::before{content:'';position:absolute;top:-40px;right:-40px;width:180px;height:180px;border-radius:50%;background:rgba(255,255,255,0.05)}\n.jz-cta h2{font-size:1.6em;color:#fff;border:none;margin:0 0 12px;position:relative;z-index:1}\n.jz-cta p{color:#c8dff0;margin-bottom:24px;position:relative;z-index:1}\n.jz-btn{display:inline-block;background:#fff;color:#0f2544;font-weight:700;font-size:.93em;padding:12px 30px;border-radius:50px;text-decoration:none;transition:all .25s;position:relative;z-index:1;box-shadow:0 4px 14px rgba(0,0,0,.18)}\n.jz-btn:hover{background:#a8d8ea;color:#0f2544;transform:translateY(-1px)}\n.jz-btn-sec{display:inline-block;background:rgba(255,255,255,0.12);color:#e8f4ff;font-weight:600;font-size:.88em;padding:10px 24px;border-radius:50px;text-decoration:none;transition:all .25s;position:relative;z-index:1;border:1px solid rgba(255,255,255,0.3);margin-left:12px}\n.jz-btn-sec:hover{background:rgba(255,255,255,0.22);color:#fff}\n.jz-tags{display:flex;flex-wrap:wrap;gap:7px;margin:20px 0}\n.jz-tag{background:#e8f2ff;color:#1a4a8a;font-size:.77em;font-weight:600;padding:4px 11px;border-radius:20px;border:1px solid #c0d8f5}\n.jz-divider{border:none;border-top:1px solid #e0ebff;margin:38px 0}\n.jz-pillar-link{display:inline-flex;align-items:center;gap:8px;background:#e8f2ff;border:1px solid #b8d5f5;border-radius:8px;padding:10px 18px;text-decoration:none;color:#1a4a8a;font-size:.9em;font-weight:600;margin:10px 0 24px;transition:all .2s}\n.jz-pillar-link:hover{background:#d0e8ff;border-color:#1a4a8a}\n<\/style>\n\n<div class=\"jz\">\n\n<div class=\"jz-hero\">\n  <div class=\"jz-hero-label\">Guide technique JEEZ - CMP Slurry<\/div>\n  <p>Une r\u00e9f\u00e9rence technique compl\u00e8te pour la s\u00e9lection, la qualification et l'optimisation des boues de planarisation chimique et m\u00e9canique - de la STI oxyde aux chimies avanc\u00e9es du cuivre, du tungst\u00e8ne, du cobalt et des m\u00e9taux de la prochaine g\u00e9n\u00e9ration.<\/p>\n  <div class=\"jz-hero-meta\">\n    <span>\ud83d\udcc5 Mise \u00e0 jour avril 2026<\/span>\n    <span>Temps de lecture : ~20 min<\/span>\n    <span>\u270d\ufe0f \u00c9quipe de r\u00e9daction technique de JEEZ<\/span>\n  <\/div>\n<\/div>\n\n<a class=\"jz-pillar-link\" href=\"https:\/\/jeez-semicon.com\/fr\/blog\/What-Are-CMP-Materials-Complete-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">\n  \u2190 Retour \u00e0 Mat\u00e9riaux CMP : Le guide complet\n<\/a>\n\n<nav class=\"jz-toc\" aria-label=\"Table des mati\u00e8res\">\n  <div class=\"jz-toc-title\">\ud83d\udccb Table des mati\u00e8res<\/div>\n  <ol>\n    <li><a href=\"#slurry-intro\">Qu'est-ce que le lisier de CMP et quelle est son importance ?<\/a><\/li>\n    <li><a href=\"#slurry-anatomy\">Anatomie d'une boue de CMP : Explication des composants cl\u00e9s<\/a><\/li>\n    <li><a href=\"#slurry-types\">Types de boues CMP par application<\/a><\/li>\n    <li><a href=\"#oxide-slurry\">Plong\u00e9e profonde dans les boues d'oxyde et de STI<\/a><\/li>\n    <li><a href=\"#copper-slurry\">Plong\u00e9e profonde dans les boues de cuivre CMP<\/a><\/li>\n    <li><a href=\"#tungsten-slurry\">Tungst\u00e8ne CMP Slurry Plong\u00e9e profonde<\/a><\/li>\n    <li><a href=\"#barrier-slurry\">Barri\u00e8re et boues m\u00e9talliques avanc\u00e9es<\/a><\/li>\n    <li><a href=\"#selection-guide\">Cadre de s\u00e9lection des boues<\/a><\/li>\n    <li><a href=\"#qualification\">Processus de qualification des boues<\/a><\/li>\n    <li><a href=\"#troubleshooting\">Probl\u00e8mes courants li\u00e9s au lisier et solutions<\/a><\/li>\n    <li><a href=\"#faq\">FAQ<\/a><\/li>\n  <\/ol>\n<\/nav>\n\n<!-- Section 1 -->\n<section id=\"slurry-intro\">\n  <h2>1. Qu'est-ce que le lisier de CMP et quelle est son importance ?<\/h2>\n  <p>La suspension CMP est le milieu liquide chimico-m\u00e9canique qui rend possible la planarisation des plaquettes de semi-conducteurs. Il s'agit d'une suspension collo\u00efdale aqueuse soigneusement con\u00e7ue, introduite entre le tampon de polissage rotatif et la surface de la plaquette pendant le processus de planarisation chimico-m\u00e9canique (CMP). Contrairement \u00e0 un simple polissage abrasif, la suspension CMP combine deux m\u00e9canismes simultan\u00e9s : <strong>adoucissement chimique<\/strong> de la surface de la plaquette par chimie r\u00e9active, et <strong>enl\u00e8vement m\u00e9canique des mat\u00e9riaux<\/strong> par le contact des particules abrasives et les forces de cisaillement hydrodynamiques.<\/p>\n  <p>C'est ce m\u00e9canisme \u00e0 double action qui conf\u00e8re \u00e0 la CMP sa capacit\u00e9 unique \u00e0 obtenir \u00e0 la fois une plan\u00e9it\u00e9 globale et une grande s\u00e9lectivit\u00e9, en \u00e9liminant le mat\u00e9riau des zones \u00e9lev\u00e9es tout en laissant les zones en retrait pratiquement intactes. Aucun autre proc\u00e9d\u00e9 au niveau des plaquettes n'offre cette combinaison de capacit\u00e9s, ce qui fait de la boue CMP l'un des consommables les plus complexes sur le plan technique dans la fabrication des semi-conducteurs.<\/p>\n  <p>Les performances d'une suspension CMP sont d\u00e9finies par un ensemble de sp\u00e9cifications multidimensionnelles qui doivent toutes \u00eatre satisfaites simultan\u00e9ment. Une suspension qui atteint un taux \u00e9lev\u00e9 d'enl\u00e8vement de mati\u00e8re (MRR) mais qui produit un nombre inacceptable de rayures n'est pas commercialement viable. De m\u00eame, une suspension qui pr\u00e9sente une excellente performance en mati\u00e8re de d\u00e9fauts mais une s\u00e9lectivit\u00e9 inad\u00e9quate provoquera l'\u00e9rosion des films environnants. Le d\u00e9fi principal de la s\u00e9lection de la suspension et de l'optimisation du processus consiste \u00e0 trouver le juste milieu.<\/p>\n\n  <div class=\"jz-stats\">\n    <div class=\"jz-stat\"><div class=\"n\">~$5.8B<\/div><div class=\"l\">Valeur estim\u00e9e du march\u00e9 mondial des boues CMP en 2026<\/div><\/div>\n    <div class=\"jz-stat\"><div class=\"n\">8-10%<\/div><div class=\"l\">Taux de croissance annuel moyen pr\u00e9vu jusqu'en 2030, gr\u00e2ce \u00e0 l'IA et aux n\u0153uds avanc\u00e9s<\/div><\/div>\n    <div class=\"jz-stat\"><div class=\"n\">30-60<\/div><div class=\"l\">Etapes CMP par plaquette de logique avanc\u00e9e - chacune n\u00e9cessitant une bouillie sp\u00e9cifique<\/div><\/div>\n    <div class=\"jz-stat\"><div class=\"n\">&lt;50 ppb<\/div><div class=\"l\">Limite d'impuret\u00e9s m\u00e9talliques pour les boues CMP de la porte du bord d'attaque<\/div><\/div>\n  <\/div>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 2 -->\n<section id=\"slurry-anatomy\">\n  <h2>2. Anatomie d'une boue de CMP : Explication des composants cl\u00e9s<\/h2>\n  <p>Chaque formulation de suspension de CMP, quelle que soit son application cible, est construite \u00e0 partir des m\u00eames classes d'ingr\u00e9dients fondamentaux. Il est essentiel de comprendre ce que fait chaque composant - et comment il interagit avec les autres - pour r\u00e9soudre les probl\u00e8mes de performance et prendre des d\u00e9cisions \u00e9clair\u00e9es lors de l'\u00e9valuation de produits concurrents.<\/p>\n\n  <div class=\"jz-grid2\">\n    <div class=\"jz-card\">\n      <h4>Particules abrasives<\/h4>\n      <ul>\n        <li>L'agent de coupe m\u00e9canique ; responsable de l'enl\u00e8vement physique de la mati\u00e8re.<\/li>\n        <li>Types les plus courants : c\u00e9ria (CeO\u2082), silice collo\u00efdale (SiO\u2082), alumine (Al\u2082O\u2083).<\/li>\n        <li>La taille des particules est g\u00e9n\u00e9ralement comprise entre 20 et 150 nm ; la largeur de la distribution (PDI) est \u00e9troitement contr\u00f4l\u00e9e.<\/li>\n        <li>Concentration g\u00e9n\u00e9ralement comprise entre 0,5 et 10 wt% ; concentration plus \u00e9lev\u00e9e \u2260 MRR toujours plus \u00e9lev\u00e9<\/li>\n        <li>La charge de surface (potentiel z\u00eata) r\u00e9git la stabilit\u00e9 des collo\u00efdes et l'interaction avec les tampons.<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Agents oxydants<\/h4>\n      <ul>\n        <li>R\u00e9agir avec la surface du m\u00e9tal ou du film di\u00e9lectrique pour former une couche oxyd\u00e9e plus douce.<\/li>\n        <li>H\u2082O\u2082 (peroxyde d'hydrog\u00e8ne) : standard pour la CMP du Cu ; thermiquement instable au-dessus de 40 \u00b0C<\/li>\n        <li>KIO\u2083, Fe(NO\u2083)\u2083 : utilis\u00e9 dans certaines formulations de boues de tungst\u00e8ne.<\/li>\n        <li>La concentration doit \u00eatre \u00e9troitement contr\u00f4l\u00e9e - une concentration trop \u00e9lev\u00e9e entra\u00eene une corrosion excessive.<\/li>\n        <li>Ajout\u00e9 au point d'utilisation (POU) dans certains syst\u00e8mes de boues pour maximiser la stabilit\u00e9.<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Agents complexants \/ ch\u00e9lateurs<\/h4>\n      <ul>\n        <li>Former des complexes m\u00e9talliques solubles pour emp\u00eacher la red\u00e9position des mat\u00e9riaux enlev\u00e9s<\/li>\n        <li>Acide citrique, glycine, acides amin\u00e9s couramment utilis\u00e9s pour le CMP du cuivre<\/li>\n        <li>EDTA et similaires pour la s\u00e9questration des ions de m\u00e9taux lourds<\/li>\n        <li>La concentration et le pH d\u00e9terminent l'efficacit\u00e9 de la complexation<\/li>\n        <li>Doit \u00eatre compatible avec la chimie de nettoyage post-CMP pour garantir une \u00e9limination compl\u00e8te.<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Inhibiteurs de corrosion<\/h4>\n      <ul>\n        <li>Former une fine pellicule protectrice sur les surfaces m\u00e9talliques pour contr\u00f4ler le surmordan\u00e7age et l'attaque galvanique.<\/li>\n        <li>BTA (benzotriazole) : norme industrielle pour la passivation du cuivre CMP<\/li>\n        <li>TTZ (tolyltriazole), d\u00e9riv\u00e9s d'imidazoles utilis\u00e9s pour le cobalt et les m\u00e9taux de barrage<\/li>\n        <li>La concentration doit trouver un \u00e9quilibre entre la protection et la suppression du MRR<\/li>\n        <li>La cin\u00e9tique de formation du film doit correspondre au temps de contact entre le tampon et la plaquette.<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Syst\u00e8me tampon pH<\/h4>\n      <ul>\n        <li>Maintien d'un pH stable pendant toute la dur\u00e9e de vie du bain de boue et sur l'outil.<\/li>\n        <li>Gamme de pH : 2-4 (acide, W\/Co), 7-9 (neutre\/alcalin, oxyde\/Cu), 10-12 (alcalin, STI)<\/li>\n        <li>Des d\u00e9rives de pH de \u00b10,5 peuvent entra\u00eener des changements significatifs de MRR et de s\u00e9lectivit\u00e9.<\/li>\n        <li>Ammoniaque, KOH, HNO\u2083, acide citrique couramment utilis\u00e9s comme correcteurs.<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Tensioactifs et dispersants<\/h4>\n      <ul>\n        <li>Maintien de la stabilit\u00e9 collo\u00efdale en emp\u00eachant l'agglom\u00e9ration des particules<\/li>\n        <li>Types anioniques, cationiques et non ioniques s\u00e9lectionn\u00e9s en fonction du pH de la boue<\/li>\n        <li>Les tensioactifs amphiphiles permettent \u00e9galement de mouiller la surface du tampon pour une distribution uniforme de la boue.<\/li>\n        <li>L'exc\u00e8s de tensioactif peut r\u00e9duire le taux de mortalit\u00e9 en interf\u00e9rant avec le contact entre l'abrasif et la surface.<\/li>\n        <li>Doit pouvoir \u00eatre enlev\u00e9 lors du nettoyage post-CMP sans laisser de r\u00e9sidus organiques.<\/li>\n      <\/ul>\n    <\/div>\n  <\/div>\n\n  <div class=\"jz-fact\">\n    <strong>Aper\u00e7u g\u00e9n\u00e9ral :<\/strong> La source la plus fr\u00e9quente de variabilit\u00e9 des performances des boues CMP en production n'est pas la formulation telle qu'elle est fournie, mais plut\u00f4t la d\u00e9gradation sur l'outil - caus\u00e9e par des excursions de temp\u00e9rature, des erreurs de dilution, le vieillissement de la ligne de boue et une gestion inad\u00e9quate de la recirculation. La performance de la suspension sur l'outil peut s'\u00e9carter consid\u00e9rablement des donn\u00e9es de qualification du fournisseur si les protocoles de gestion du bain ne sont pas rigoureusement suivis.\n  <\/div>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 3 -->\n<section id=\"slurry-types\">\n  <h2>3. Types de boues CMP par application<\/h2>\n  <p>Les barbotines CMP ne sont pas interchangeables. Chaque application - d\u00e9finie par le film cible, la couche d'arr\u00eat sous-jacente, l'architecture de l'appareil et les exigences de performance - exige une composition chimique de suspension sp\u00e9cifique. Le tableau suivant fournit une carte de r\u00e9f\u00e9rence compl\u00e8te des types de suspension utilis\u00e9s dans la fabrication moderne de semi-conducteurs.<\/p>\n\n  <div class=\"jz-table-wrap\">\n    <table class=\"jz-table\">\n      <thead>\n        <tr><th>Cat\u00e9gorie de boues<\/th><th>Film cible<\/th><th>Couche d'arr\u00eat<\/th><th>Abrasif<\/th><th>Gamme de pH<\/th><th>Exigence de s\u00e9lectivit\u00e9 cl\u00e9<\/th><\/tr>\n      <\/thead>\n      <tbody>\n        <tr><td><strong>Oxyde de STI<\/strong><\/td><td>SiO\u2082 (HDP, TEOS)<\/td><td>Si\u2083N\u2084<\/td><td>Ceria<\/td><td>5-9<\/td><td>SiO\u2082:SiN &gt; 100:1<\/td><\/tr>\n        <tr><td><strong>Planarisation de l'ILD<\/strong><\/td><td>SiO\u2082, FSG, USG<\/td><td>Aucun (chronom\u00e9tr\u00e9)<\/td><td>Ceria ou Silica<\/td><td>7-10<\/td><td>Taux d'enl\u00e8vement uniforme<\/td><\/tr>\n        <tr><td><strong>Di\u00e9lectrique pr\u00e9-m\u00e9tallique<\/strong><\/td><td>BPSG, PSG<\/td><td>Si, poly-Si<\/td><td>Silice<\/td><td>8-11<\/td><td>SiO\u2082:Si &gt; 50:1<\/td><\/tr>\n        <tr><td><strong>Cuivre en vrac (\u00e9tape 1)<\/strong><\/td><td>Cu<\/td><td>Barri\u00e8re m\u00e9tallique<\/td><td>Silice collo\u00efdale<\/td><td>4-8<\/td><td>Cu:barri\u00e8re &gt; 50:1<\/td><\/tr>\n        <tr><td><strong>\u00c9limination des barri\u00e8res (\u00e9tape 2)<\/strong><\/td><td>Ta\/TaN, TiN, Co, Ru<\/td><td>SiO\u2082<\/td><td>Silice collo\u00efdale<\/td><td>5-9<\/td><td>Barri\u00e8re:oxyde \u2248 1:1-5:1<\/td><\/tr>\n        <tr><td><strong>Tungst\u00e8ne via<\/strong><\/td><td>W<\/td><td>TiN, SiO\u2082<\/td><td>Alumine ou silice<\/td><td>2-5<\/td><td>W:TiN &gt; 20:1<\/td><\/tr>\n        <tr><td><strong>Contact cobalt<\/strong><\/td><td>Co<\/td><td>TiN, di\u00e9lectrique<\/td><td>Silice collo\u00efdale<\/td><td>4-7<\/td><td>Co:di\u00e9lectrique 5:1-20:1<\/td><\/tr>\n        <tr><td><strong>Polysilicium<\/strong><\/td><td>Poly-Si<\/td><td>SiO\u2082, SiN<\/td><td>Silice collo\u00efdale<\/td><td>9-12<\/td><td>Poly-Si:SiO\u2082 accordable<\/td><\/tr>\n        <tr><td><strong>Poly\u00e9thyl\u00e8ne peu profond \/ portail<\/strong><\/td><td>Poly-Si (fin)<\/td><td>Di\u00e9lectrique high-k<\/td><td>Silice collo\u00efdale dilu\u00e9e<\/td><td>9-11<\/td><td>Exigences tr\u00e8s faibles en mati\u00e8re de dommages<\/td><\/tr>\n        <tr><td><strong>Ruth\u00e9nium<\/strong><\/td><td>Ru<\/td><td>Di\u00e9lectrique<\/td><td>Silice collo\u00efdale + oxydant<\/td><td>3-6<\/td><td>\u00c9mergence ; maturation de la chimie<\/td><\/tr>\n        <tr><td><strong>Collage hybride<\/strong><\/td><td>SiO\u2082, SiCN<\/td><td>Aucun (surface finale)<\/td><td>Silice ultra-pure<\/td><td>7-9<\/td><td>Ra inf\u00e9rieur \u00e0 0,3 nm requis<\/td><\/tr>\n      <\/tbody>\n    <\/table>\n  <\/div>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 4 -->\n<section id=\"oxide-slurry\">\n  <h2>4. Plong\u00e9e profonde dans les boues d'oxyde et de STI<\/h2>\n  <p>Le CMP des oxydes - et en particulier la planarisation de l'isolation des tranch\u00e9es peu profondes (STI) - repr\u00e9sente le segment d'application le plus important en volume pour la p\u00e2te CMP. La STI est le processus qui d\u00e9finit les r\u00e9gions d'isolation entre transistors voisins et qui est ex\u00e9cut\u00e9 au tout d\u00e9but de la s\u00e9quence FEOL. Les exigences de performance sont s\u00e9v\u00e8res : SiO\u2082 doit \u00eatre enlev\u00e9 rapidement et uniform\u00e9ment sur une tranche de 300 mm tout en s'arr\u00eatant avec une pr\u00e9cision et une s\u00e9lectivit\u00e9 \u00e9lev\u00e9es sur le masque dur Si\u2083N\u2084 sous-jacent.<\/p>\n\n  <h3>Pourquoi le c\u00e9rium domine la STI CMP<\/h3>\n  <p>L'oxyde de c\u00e9rium (CeO\u2082) est le mat\u00e9riau de choix pour les boues STI en raison d'un ph\u00e9nom\u00e8ne connu sous le nom d'abrasivit\u00e9. <em>effet dentaire chimique<\/em>. Contrairement \u00e0 la silice ou \u00e0 l'alumine, les particules de c\u00e9ria forment des liaisons de surface directes Ce-O-Si avec le dioxyde de silicium \u00e0 l'interface de contact. Ce m\u00e9canisme de liaison chimique augmente consid\u00e9rablement le taux d'\u00e9limination de SiO\u2082 par rapport \u00e0 Si\u2083N\u2084, qui ne participe pas \u00e0 cette r\u00e9action dans la m\u00eame mesure. Il en r\u00e9sulte une s\u00e9lectivit\u00e9 naturelle SiO\u2082:Si\u2083N\u2084 qui peut d\u00e9passer 100:1 dans des conditions optimis\u00e9es - bien au-del\u00e0 de ce que les boues \u00e0 base de silice peuvent atteindre.<\/p>\n\n  <div class=\"jz-grid2\">\n    <div class=\"jz-card\">\n      <h4>Avantages de la boue Ceria STI<\/h4>\n      <ul>\n        <li>S\u00e9lectivit\u00e9 intrins\u00e8que \u00e9lev\u00e9e SiO\u2082:SiN sans additifs<\/li>\n        <li>Excellente efficacit\u00e9 dans la r\u00e9duction de la hauteur des marches<\/li>\n        <li>Plus faible concentration d'abrasif n\u00e9cessaire (0,5-2 wt%) par rapport \u00e0 la silice<\/li>\n        <li>Bonne rugosit\u00e9 de surface post-CMP (&lt;0,15 nm Ra r\u00e9alisable)<\/li>\n        <li>Largement qualifi\u00e9 sur les plateformes Mirra et Ebara d'Applied Materials<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>D\u00e9fis li\u00e9s \u00e0 la boue Ceria STI<\/h4>\n      <ul>\n        <li>Les particules de c\u00e9ria sont plus dures et peuvent provoquer des micro-rayures si elles sont agglom\u00e9r\u00e9es.<\/li>\n        <li>Sensible \u00e0 la contamination ionique - la puret\u00e9 du bain est critique<\/li>\n        <li>Ceria supply chain depends heavily on Chinese rare earth output<\/li>\n        <li>Requires careful pH control (typically 5\u20138) for optimal Ce\u2013O\u2013Si reaction<\/li>\n        <li>Higher raw material cost compared to fumed or colloidal silica<\/li>\n      <\/ul>\n    <\/div>\n  <\/div>\n\n  <h3>Pattern Density Effects and WIWNU<\/h3>\n  <p>One of the most persistent challenges in STI CMP is managing within-wafer non-uniformity (WIWNU) caused by pattern density variation across the die and across the wafer. Areas with high oxide pattern density experience slower planarization because the load is distributed across a larger contact area (lower local pressure). This density-dependent removal rate leads to residual topography after CMP \u2014 the so-called &#8220;oxide loading effect.&#8221;<\/p>\n  <p>Modern STI slurry formulations address this through selectivity additives \u2014 typically anionic polymers or amino acids \u2014 that preferentially adsorb on Si\u2083N\u2084 surfaces, amplifying the natural selectivity of ceria and improving the response of the slurry to pattern density variation. Combining these additive-tuned slurries with pad systems engineered for planarization efficiency is the standard approach for achieving &lt;10 nm residual topography across the full 300 mm wafer.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 5 -->\n<section id=\"copper-slurry\">\n  <h2>5. Copper CMP Slurry Deep Dive<\/h2>\n  <p>Copper damascene CMP is a two-step process that is the workhorse of BEOL (back-end-of-line) interconnect fabrication at all logic nodes from 180 nm down to the leading edge. It is also one of the most chemically complex CMP applications, involving simultaneous polishing of multiple materials \u2014 copper, barrier metals, and dielectric \u2014 each with very different mechanical and chemical properties.<\/p>\n\n  <h3>The Copper Damascene CMP Sequence<\/h3>\n  <div class=\"jz-steps\">\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">1<\/div>\n      <div class=\"jz-step-body\"><p><strong>Bulk copper removal (Step 1 slurry):<\/strong> High MRR copper slurry removes the thick copper overburden deposited by electroplating. The step runs until the barrier metal is just exposed across the full wafer. Target MRR: 300\u2013600 nm\/min for copper, near-zero for barrier.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">2<\/div>\n      <div class=\"jz-step-body\"><p><strong>Barrier clearing (Step 2 slurry):<\/strong> The barrier metal (Ta\/TaN, TiN, or Co liner) is removed along with any residual copper. The slurry must remove barrier material while minimizing copper dishing and oxide erosion. Selectivity between barrier, copper, and SiO\u2082 is carefully balanced.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">3<\/div>\n      <div class=\"jz-step-body\"><p><strong>Optional buff (soft pad + dilute slurry):<\/strong> A third low-pressure step with a soft pad removes residual barrier particles and reduces surface roughness to meet defect specifications. Not all process flows include this step, but it is increasingly common at sub-14 nm nodes.<\/p><\/div>\n    <\/div>\n  <\/div>\n\n  <h3>Chemistry of Copper CMP: The BTA Balance<\/h3>\n  <p>Copper CMP slurry chemistry must simultaneously achieve high copper MRR while protecting recessed copper surfaces from over-etch. This is accomplished through the interplay of three chemical components:<\/p>\n  <ul>\n    <li><strong>H\u2082O\u2082 (oxidizer):<\/strong> Converts copper metal to a softer Cu\u2082O or CuO surface layer that is more easily removed by abrasive contact. The oxidizer concentration directly controls copper MRR \u2014 but if too high, it causes roughening and pitting on the polished copper surface.<\/li>\n    <li><strong>BTA \/ azole inhibitors:<\/strong> Form a thin, protective Cu\u2013BTA passivation film on copper surfaces. This film is mechanically removed by the abrasive only where the pad exerts local contact pressure (i.e., at the high points). On recessed copper features, the BTA film remains intact, suppressing further chemical attack and thus controlling dishing.<\/li>\n    <li><strong>Glycine or citric acid (complexant):<\/strong> Dissolves the chemically oxidized copper layer and forms soluble Cu-complexes that are carried away by slurry flow, preventing re-deposition.<\/li>\n  <\/ul>\n\n  <div class=\"jz-warn\">\n    <div class=\"jz-warn-icon\">\u26a0\ufe0f<\/div>\n    <div class=\"jz-warn-body\">\n      <strong>Stability warning:<\/strong> Hydrogen peroxide degrades rapidly at elevated temperatures and is catalytically decomposed by trace metal ions (particularly Fe\u00b3\u207a and Cu\u00b2\u207a). Copper CMP slurries containing H\u2082O\u2082 must be stored below 25 \u00b0C and used within the pot-life window specified by the supplier. Many fabs add H\u2082O\u2082 at point-of-use (POU) rather than premixing to maximize slurry stability. See our <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/CMP-Slurry-Storage-Handling-Safety\/\" target=\"_blank\" rel=\"noopener noreferrer\">Stockage, manutention et s\u00e9curit\u00e9 des boues CMP<\/a> guide for full protocols.\n    <\/div>\n  <\/div>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 6 -->\n<section id=\"tungsten-slurry\">\n  <h2>6. Tungsten CMP Slurry Deep Dive<\/h2>\n  <p>Tungsten CMP is used to planarize tungsten plug fills in contact and via structures. It is one of the oldest and most mature CMP applications, having been introduced at the 0.35 \u00b5m node in the early 1990s. Despite its maturity, tungsten CMP remains technically demanding: the slurry must achieve high W MRR while stopping on the underlying TiN barrier and SiO\u2082 dielectric without causing over-polish or recess of the tungsten plugs.<\/p>\n\n  <h3>Oxidizer Chemistry Options for W CMP<\/h3>\n  <div class=\"jz-grid2\">\n    <div class=\"jz-card\">\n      <h4>H\u2082O\u2082-Based Tungsten Slurries<\/h4>\n      <ul>\n        <li>Most widely used in current production<\/li>\n        <li>Clean by-products (H\u2082O only); easier to handle than iron-based systems<\/li>\n        <li>W MRR: 100\u2013300 nm\/min at typical conditions<\/li>\n        <li>Moderate selectivity to TiN and SiO\u2082<\/li>\n        <li>Susceptible to H\u2082O\u2082 decomposition by metal ion contamination<\/li>\n      <\/ul>\n    <\/div>\n    <div class=\"jz-card\">\n      <h4>Fe(NO\u2083)\u2083-Based Tungsten Slurries<\/h4>\n      <ul>\n        <li>Iron(III) nitrate as oxidizer; historically the first W CMP chemistry<\/li>\n        <li>Higher MRR than H\u2082O\u2082 systems; good selectivity control<\/li>\n        <li>Iron contamination risk \u2014 strict post-CMP clean required<\/li>\n        <li>Less favored in advanced logic due to Fe contamination sensitivity<\/li>\n        <li>Still used in some mature node \/ DRAM applications<\/li>\n      <\/ul>\n    <\/div>\n  <\/div>\n\n  <p>Alumina abrasive is the traditional choice for W CMP, valued for its hardness and effectiveness at removing the tenacious WO\u2083 surface layer formed by the oxidizer. However, alumina&#8217;s high hardness also brings higher scratch risk, and many leading-edge applications are transitioning to optimized colloidal silica formulations that can achieve comparable MRR with significantly better defect performance \u2014 particularly important as tungsten via dimensions shrink below 20 nm.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 7 -->\n<section id=\"barrier-slurry\">\n  <h2>7. Barrier &amp; Advanced Metal Slurries<\/h2>\n  <p>As semiconductor technology has advanced to sub-10 nm nodes, CMP must now handle an expanding portfolio of metals beyond the traditional Cu\/W\/Ti\/Ta system. Barrier and new-metal slurries represent the most rapidly evolving frontier of CMP chemistry.<\/p>\n\n  <h3>Cobalt (Co) CMP<\/h3>\n  <p>Cobalt has replaced tungsten as the preferred contact and local interconnect metal at 7 nm and below in several TSMC and Samsung process flows, due to its lower resistivity at small feature dimensions. Cobalt CMP presents unique challenges: Co is significantly softer than W and is susceptible to galvanic corrosion at interfaces with TiN and dielectric films. Slurries must be formulated with mild oxidizers, Co-specific complexants, and corrosion inhibitors that do not suppress MRR to unacceptable levels.<\/p>\n\n  <h3>Ruthenium (Ru) CMP<\/h3>\n  <p>Ruthenium is an emerging metal for contacts, local interconnects, and gate fill at sub-5 nm nodes, with a bulk resistivity advantage over both W and Co at nanometer dimensions. Ru CMP chemistry is currently maturing in R&amp;D environments: Ru is chemically resistant to common oxidizers and requires highly oxidizing acidic environments (typically containing KIO\u2084 or Ce-based oxidizers at pH 2\u20134) to achieve useful MRR. Managing Ru selectivity against underlying dielectrics remains an active area of development.<\/p>\n\n  <h3>Molybdenum (Mo) CMP<\/h3>\n  <p>Molybdenum is attracting significant interest as a replacement for tungsten in wordline fill applications in 3D NAND and as a gate metal for GAA transistors, where its good thermal stability and workfunction make it attractive. Mo CMP uses strongly oxidizing acidic slurries. MoO\u2083 dissolution kinetics are pH-sensitive, creating a lever for selectivity control between Mo and surrounding SiO\u2082 or SiN films.<\/p>\n\n  <p>For a detailed comparison of abrasive performance across all these metal systems, refer to our companion article on <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/CMP-Abrasives-Ceria-vs-Silica-vs-Alumina\/\" target=\"_blank\" rel=\"noopener noreferrer\">CMP Abrasives: Ceria vs. Silica vs. Alumina<\/a>.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 8 -->\n<section id=\"selection-guide\">\n  <h2>8. Slurry Selection Framework<\/h2>\n  <p>Selecting a CMP slurry for a new process application requires a structured evaluation methodology. The following framework is used by process engineers at leading fabs and is the basis for JEEZ&#8217;s application engineering engagement process.<\/p>\n\n  <div class=\"jz-steps\">\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">1<\/div>\n      <div class=\"jz-step-body\"><p><strong>Define the process specification envelope:<\/strong> Document the target film, stop layer, overburden thickness, target MRR, required selectivity, WIWNU budget (&lt;2% 1\u03c3 typical), dishing and erosion limits, and maximum allowable scratch\/defect density. These become your pass\/fail criteria for slurry qualification.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">2<\/div>\n      <div class=\"jz-step-body\"><p><strong>Screen candidate chemistries:<\/strong> Based on the target film and stop layer, identify the appropriate abrasive type and oxidizer chemistry. Request product data sheets and qualification datasets from multiple suppliers. Prioritize suppliers who can provide application-matched data from comparable tool platforms.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">3<\/div>\n      <div class=\"jz-step-body\"><p><strong>Conduct blanket wafer DOE:<\/strong> Evaluate MRR, WIWNU, and surface morphology (AFM roughness) on blanket films as a function of the key process variables: down force, platen speed, slurry flow rate, pad type, and slurry concentration. Identify the sweet spot within the Preston space for your target MRR and uniformity.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">4<\/div>\n      <div class=\"jz-step-body\"><p><strong>Patterned wafer evaluation:<\/strong> Run the candidate slurry on patterned qualification wafers (SEMATECH 854\/956 masks or equivalent) to measure dishing, erosion, and residuals across a range of pattern densities and feature sizes. Compare results against your specification limits.<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">5<\/div>\n      <div class=\"jz-step-body\"><p><strong>Defect and contamination characterization:<\/strong> Run full-wafer defect inspections (KLA 2930 or equivalent) and VPD-ICPMS for trace metal analysis. Compare metal impurity levels against ITRS\/IRDS requirements for the relevant process level (FEOL gate CMP has the most stringent limits).<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">6<\/div>\n      <div class=\"jz-step-body\"><p><strong>Stability and shelf-life testing:<\/strong> Evaluate particle size distribution, pH, and MRR as a function of storage time and temperature. Confirm compliance with your fab&#8217;s minimum shelf-life requirements (typically 6\u201312 months from date of manufacture).<\/p><\/div>\n    <\/div>\n    <div class=\"jz-step\">\n      <div class=\"jz-step-num\">7<\/div>\n      <div class=\"jz-step-body\"><p><strong>Lot-to-lot consistency audit:<\/strong> Request three or more consecutive production lots and verify key parameters (MRR on reference wafers, particle size D50 and D90, pH) fall within the supplier&#8217;s Certificate of Analysis (COA) limits. Consistency is often as important as absolute performance.<\/p><\/div>\n    <\/div>\n  <\/div>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 9 -->\n<section id=\"qualification\">\n  <h2>9. Slurry Qualification Process in Production<\/h2>\n  <p>Introducing a new slurry into a production environment requires formal qualification through the fab&#8217;s change control process. Even a slurry that is technically superior to the incumbent must pass a qualification gate designed to protect yield and process stability. The key qualification milestones are:<\/p>\n  <ul>\n    <li><strong>Engineering split:<\/strong> The new slurry runs on a subset of wafers alongside the baseline, enabling direct performance comparison under identical process conditions.<\/li>\n    <li><strong>Extended lot qualification:<\/strong> After the initial split shows acceptable results, the new slurry is run on a larger lot (typically 25+ wafers) to generate statistically meaningful defect and uniformity data.<\/li>\n    <li><strong>Downstream yield correlation:<\/strong> Wafers polished with the new slurry are tracked through subsequent process steps and electrical test to confirm that any changes in CMP performance do not affect final device yield.<\/li>\n    <li><strong>Reliability screen:<\/strong> For gate-level applications, accelerated reliability tests (TDDB, EM) may be required to confirm that trace metal contamination from the new slurry does not degrade long-term device reliability.<\/li>\n    <li><strong>Supply chain audit:<\/strong> The slurry supplier&#8217;s manufacturing site, raw material sourcing, QC procedures, and supply continuity plans are reviewed as part of the full qualification package.<\/li>\n  <\/ul>\n  <p>JEEZ provides comprehensive qualification support packages for all our slurry products, including certified reference wafer MRR data, lot-to-lot consistency reports, full COA documentation, and dedicated application engineering support throughout the qualification process. <a href=\"https:\/\/jeez-semicon.com\/fr\/contact\/\" target=\"_blank\" rel=\"noopener noreferrer\">Contact our technical team<\/a> to initiate a qualification engagement.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 10 -->\n<section id=\"troubleshooting\">\n  <h2>10. Common Slurry-Related Problems &amp; Solutions<\/h2>\n  <div class=\"jz-table-wrap\">\n    <table class=\"jz-table\">\n      <thead>\n        <tr><th>Sympt\u00f4me<\/th><th>Most Likely Root Cause<\/th><th>Diagnostic Step<\/th><th>Corrective Action<\/th><\/tr>\n      <\/thead>\n      <tbody>\n        <tr><td>MRR dropping over time within a run<\/td><td>Pad glazing; slurry H\u2082O\u2082 decomposition<\/td><td>Check conditioning endpoint; test fresh slurry lot<\/td><td>Increase conditioning frequency; verify slurry temperature at POU<\/td><\/tr>\n        <tr><td>High scratch count on blanket wafers<\/td><td>Particle agglomeration; oversized particles<\/td><td>Measure PSD (DLS); inspect slurry filter<\/td><td>Replace 0.1 \u00b5m POU filter; check slurry bath agitation and recirculation<\/td><\/tr>\n        <tr><td>Excessive copper dishing<\/td><td>Over-polishing; insufficient BTA concentration<\/td><td>Reduce polish time; check inhibitor concentration in bath<\/td><td>Tighten endpoint detection; verify BTA concentration via titration<\/td><\/tr>\n        <tr><td>Poor STI uniformity (oxide loading effect)<\/td><td>Insufficient selectivity additive; pad too soft<\/td><td>Map WIWNU across wafer; check additive lot<\/td><td>Increase selectivity additive concentration; switch to harder pad<\/td><\/tr>\n        <tr><td>Metal contamination on post-CMP wafers<\/td><td>Slurry metal impurities; inadequate post-CMP clean<\/td><td>VPD-ICPMS of wafer surface; review slurry COA<\/td><td>Switch to higher-purity slurry grade; intensify post-CMP DHF clean step<\/td><\/tr>\n        <tr><td>MRR lot-to-lot variation &gt;5%<\/td><td>Supplier abrasive particle size drift; pH variation<\/td><td>Measure reference wafer MRR on incoming lots; check PSD and pH<\/td><td>Tighten incoming inspection spec; request tighter COA limits from supplier<\/td><\/tr>\n      <\/tbody>\n    <\/table>\n  <\/div>\n  <p>For a comprehensive treatment of CMP process defects and their root causes, see our dedicated guide on <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/CMP-Process-Defects-Causes-Types-Solutions\/\" target=\"_blank\" rel=\"noopener noreferrer\">D\u00e9fauts du processus CMP : Causes, types et solutions<\/a>.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<!-- Section 11 FAQ -->\n<section id=\"faq\">\n  <h2>11. Frequently Asked Questions<\/h2>\n  <h3>What is the difference between CMP slurry Step 1 and Step 2?<\/h3>\n  <p>In copper damascene CMP, Step 1 slurry is a high-MRR formulation designed to rapidly remove the bulk copper overburden, stopping on the barrier metal layer. Step 2 slurry removes the exposed barrier metal (Ta\/TaN, TiN, or Co liner) while minimizing copper dishing and dielectric erosion. Step 2 slurries typically have more balanced selectivity between Cu, barrier, and SiO\u2082 compared to the strongly Cu-selective Step 1 slurry.<\/p>\n\n  <h3>How does slurry pH affect CMP performance?<\/h3>\n  <p>pH affects virtually every aspect of slurry behavior: abrasive particle surface charge (and therefore colloidal stability and aggregation tendency), the rate and mechanism of chemical attack on the wafer surface, inhibitor film formation kinetics, and the solubility of removal by-products. For ceria STI slurries, pH controls the Ce\u2013O\u2013Si bond formation rate. For copper slurries, pH affects BTA inhibitor film integrity. Even a \u00b10.3 pH unit drift from the target can cause measurable MRR and selectivity changes in sensitive formulations.<\/p>\n\n  <h3>Can I reuse or recirculate CMP slurry?<\/h3>\n  <p>Slurry recirculation is practiced at some fabs to reduce chemical cost, but it is not universally recommended. Recirculated slurry contains accumulated metal ions, abraded pad debris, and oxidizer breakdown products that can increase defectivity and contamination risk. If recirculation is used, thorough filtration, pH monitoring, and oxidizer concentration refresh are required. Most high-volume advanced-logic fabs use once-through slurry delivery to ensure consistent quality at every wafer pass.<\/p>\n\n  <h3>What is the shelf life of CMP slurry?<\/h3>\n  <p>Shelf life varies by slurry type. Most oxide and polysilicon slurries remain stable for 12\u201318 months from the date of manufacture when stored at 15\u201325 \u00b0C with occasional gentle agitation. Copper slurries containing pre-mixed H\u2082O\u2082 have significantly shorter shelf lives (often 3\u20136 months) due to oxidizer degradation. Some fabs address this by receiving slurry without H\u2082O\u2082 and adding it at point-of-use. Always refer to the supplier&#8217;s SDS and product-specific storage guidelines.<\/p>\n<\/section>\n\n<hr class=\"jz-divider\"\/>\n\n<div class=\"jz-tags\">\n  <span class=\"jz-tag\">Boues de CMP<\/span><span class=\"jz-tag\">Oxyde CMP<\/span><span class=\"jz-tag\">Cuivre CMP<\/span>\n  <span class=\"jz-tag\">Tungsten CMP<\/span><span class=\"jz-tag\">Ceria Slurry<\/span><span class=\"jz-tag\">STI CMP<\/span>\n  <span class=\"jz-tag\">Semiconductor Consumables<\/span><span class=\"jz-tag\">JEEZ<\/span>\n<\/div>\n\n<div class=\"jz-cta\">\n  <h2>Request a CMP Slurry Sample from JEEZ<\/h2>\n  <p>Our application engineers will match the right slurry formulation to your process node, target film, and tool platform \u2014 and ship a qualified sample with full COA documentation and technical support.<\/p>\n  <a href=\"https:\/\/jeez-semicon.com\/fr\/contact\/\" target=\"_blank\" rel=\"noopener noreferrer\" class=\"jz-btn\">Request a Slurry Sample<\/a>\n  <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/What-Are-CMP-Materials-Complete-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\" class=\"jz-btn-sec\">\u2190 CMP Materials Complete Guide<\/a>\n<\/div>\n\n<\/div>","protected":false},"excerpt":{"rendered":"<p>JEEZ Technical Guide \u00b7 CMP Slurry A complete engineering reference for selecting, qualifying, and optimizing chemical mechanical planarization slurries \u2014 from oxide STI to advanced copper, tungsten, cobalt, and next-generation  &#8230;<\/p>","protected":false},"author":1,"featured_media":1950,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[9,59],"tags":[],"class_list":["post-1917","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-blog","category-industry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1917","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/comments?post=1917"}],"version-history":[{"count":2,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1917\/revisions"}],"predecessor-version":[{"id":1919,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1917\/revisions\/1919"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media\/1950"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media?parent=1917"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/categories?post=1917"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/tags?post=1917"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}