{"id":1929,"date":"2026-04-30T14:30:13","date_gmt":"2026-04-30T06:30:13","guid":{"rendered":"https:\/\/jeez-semicon.com\/?p=1929"},"modified":"2026-04-30T15:05:39","modified_gmt":"2026-04-30T07:05:39","slug":"cmp-materials-for-advanced-nodes-below-14nm","status":"publish","type":"post","link":"https:\/\/jeez-semicon.com\/fr\/blog\/cmp-materials-for-advanced-nodes-below-14nm\/","title":{"rendered":"CMP Materials for Advanced Nodes (Below 14 nm)"},"content":{"rendered":"<!-- JEEZ | Cluster 5: CMP Materials for Advanced Nodes (Below 14 nm) -->\r\n<p><style>\r\n.jz*,.jz *::before,.jz *::after{box-sizing:border-box;margin:0;padding:0}\r\n.jz{font-family:'Segoe UI',Arial,sans-serif;font-size:16px;line-height:1.8;color:#1a1a2e;max-width:900px;margin:0 auto}\r\n.jz-hero{background:linear-gradient(135deg,#0f2544 0%,#1a4a8a 55%,#0e7c86 100%);border-radius:12px;padding:56px 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ul{padding-left:16px}\r\n.jz-card li{font-size:.91em;color:#334;margin-bottom:5px}\r\n.jz-table-wrap{overflow-x:auto;margin:26px 0}\r\n.jz-table{width:100%;border-collapse:collapse;font-size:.91em}\r\n.jz-table thead tr{background:linear-gradient(90deg,#0f2544,#1a4a8a);color:#fff}\r\n.jz-table th{padding:12px 14px;text-align:left;font-weight:600;white-space:nowrap}\r\n.jz-table td{padding:10px 14px;border-bottom:1px solid #e4edf8;color:#334;vertical-align:top}\r\n.jz-table tbody tr:nth-child(even){background:#f5f9ff}\r\n.jz-table tbody tr:hover{background:#ebf3ff}\r\n.jz-fact{border-left:4px solid #0e7c86;padding:14px 20px;background:#f0fffe;border-radius:0 8px 8px 0;margin:22px 0;font-size:1em;color:#0f3a3a;font-style:italic}\r\n.jz-fact strong{font-style:normal;color:#064444}\r\n.jz-timeline{margin:28px 0}\r\n.jz-tl-item{display:flex;gap:18px;margin-bottom:20px}\r\n.jz-tl-dot{flex-shrink:0;width:14px;height:14px;border-radius:50%;background:#1a4a8a;margin-top:6px;position:relative}\r\n.jz-tl-dot::after{content:'';position:absolute;left:6px;top:14px;width:2px;height:calc(100% + 10px);background:#c8d8f0}\r\n.jz-tl-item:last-child .jz-tl-dot::after{display:none}\r\n.jz-tl-body{font-size:.94em}\r\n.jz-tl-body strong{color:#0f2544;display:block;margin-bottom:2px}\r\n.jz-cta{background:linear-gradient(135deg,#0f2544 0%,#1a4a8a 60%,#0e7c86 100%);border-radius:12px;padding:44px 36px;text-align:center;margin:56px 0 36px;position:relative;overflow:hidden}\r\n.jz-cta h2{font-size:1.6em;color:#fff;border:none;margin:0 0 12px;position:relative;z-index:1}\r\n.jz-cta p{color:#c8dff0;margin-bottom:24px;position:relative;z-index:1}\r\n.jz-btn{display:inline-block;background:#fff;color:#0f2544;font-weight:700;font-size:.93em;padding:12px 30px;border-radius:50px;text-decoration:none;transition:all .25s;position:relative;z-index:1;box-shadow:0 4px 14px rgba(0,0,0,.18)}\r\n.jz-btn:hover{background:#a8d8ea;color:#0f2544;transform:translateY(-1px)}\r\n.jz-btn-sec{display:inline-block;background:rgba(255,255,255,0.12);color:#e8f4ff;font-weight:600;font-size:.88em;padding:10px 24px;border-radius:50px;text-decoration:none;transition:all .25s;position:relative;z-index:1;border:1px solid rgba(255,255,255,0.3);margin-left:12px}\r\n.jz-btn-sec:hover{background:rgba(255,255,255,0.22);color:#fff}\r\n.jz-tags{display:flex;flex-wrap:wrap;gap:7px;margin:20px 0}\r\n.jz-tag{background:#e8f2ff;color:#1a4a8a;font-size:.77em;font-weight:600;padding:4px 11px;border-radius:20px;border:1px solid #c0d8f5}\r\n.jz-divider{border:none;border-top:1px solid #e0ebff;margin:38px 0}\r\n.jz-pillar-link{display:inline-flex;align-items:center;gap:8px;background:#e8f2ff;border:1px solid #b8d5f5;border-radius:8px;padding:10px 18px;text-decoration:none;color:#1a4a8a;font-size:.9em;font-weight:600;margin:10px 0 24px;transition:all .2s}\r\n.jz-pillar-link:hover{background:#d0e8ff;border-color:#1a4a8a}\r\n<\/style><\/p>\r\n<div class=\"jz\">\r\n<div class=\"jz-hero\">\r\n<div class=\"jz-hero-label\">JEEZ Technical Guide \u00b7 Advanced Node CMP<\/div>\r\n<p>A comprehensive technical guide to CMP consumable requirements for FinFET, Gate-All-Around, 3D NAND, and 3D-IC architectures \u2014 covering novel metal chemistries, ultra-low-k challenges, hybrid bonding planarization, and the evolving materials roadmap through 2030.<\/p>\r\n<div class=\"jz-hero-meta\">\ud83d\udcc5 Updated April 2026\u23f1 Reading time: ~22 min\u270d\ufe0f JEEZ Technical Editorial Team<\/div>\r\n<\/div>\r\n<a class=\"jz-pillar-link\" href=\"https:\/\/jeez-semicon.com\/fr\/blog\/What-Are-CMP-Materials-Complete-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">\u2190 Retour \u00e0 Mat\u00e9riaux CMP : Le guide complet<\/a><nav class=\"jz-toc\" aria-label=\"Table des mati\u00e8res\">\r\n<div class=\"jz-toc-title\">\ud83d\udccb Table des mati\u00e8res<\/div>\r\n<ol>\r\n<li><a href=\"#an-intro\">Why Advanced Nodes Demand More from CMP Materials<\/a><\/li>\r\n<li><a href=\"#finfet\">CMP Challenges in FinFET Architecture (14\u20137 nm)<\/a><\/li>\r\n<li><a href=\"#gaa\">Gate-All-Around (GAA) and CMP at 3 nm and Below<\/a><\/li>\r\n<li><a href=\"#cobalt\">Cobalt CMP: Chemistry, Challenges, and Defect Control<\/a><\/li>\r\n<li><a href=\"#ruthenium\">Ruthenium CMP: The Emerging Frontier<\/a><\/li>\r\n<li><a href=\"#molybdenum\">Molybdenum CMP for GAA Gate Fill<\/a><\/li>\r\n<li><a href=\"#lowk\">Ultra-Low-k Dielectric CMP: Mechanical Fragility and Selectivity<\/a><\/li>\r\n<li><a href=\"#3dnand\">CMP for 3D NAND: High Aspect Ratio and Multi-Layer Demands<\/a><\/li>\r\n<li><a href=\"#3dic\">3D-IC and Hybrid Bonding: The Sub-Nanometer Roughness Challenge<\/a><\/li>\r\n<li><a href=\"#roadmap\">CMP Materials Roadmap: 2026 to 2030<\/a><\/li>\r\n<li><a href=\"#faq\">FAQ<\/a><\/li>\r\n<\/ol>\r\n<\/nav>\r\n<section id=\"an-intro\">\r\n<h2>1. Why Advanced Nodes Demand More from CMP Materials<\/h2>\r\n<p>The transition from planar CMOS to FinFET, and now to Gate-All-Around (GAA) nanosheet transistors, has not simply shrunk device dimensions \u2014 it has fundamentally transformed the geometric, chemical, and mechanical environment in which CMP must operate. Each successive architecture introduces new materials, tighter removal budgets, and higher step-count requirements that push standard CMP consumables beyond their design envelope.<\/p>\r\n<div class=\"jz-stats\">\r\n<div class=\"jz-stat\">\r\n<div class=\"n\">&lt;5 nm<\/div>\r\n<div class=\"l\">Leading-edge logic node in high-volume production as of April 2026<\/div>\r\n<\/div>\r\n<div class=\"jz-stat\">\r\n<div class=\"n\">60+<\/div>\r\n<div class=\"l\">CMP process steps per wafer in advanced logic vs. &lt;10 at 180 nm<\/div>\r\n<\/div>\r\n<div class=\"jz-stat\">\r\n<div class=\"n\">0.3 nm<\/div>\r\n<div class=\"l\">Maximum post-CMP Ra target for hybrid bonding layer preparation<\/div>\r\n<\/div>\r\n<div class=\"jz-stat\">\r\n<div class=\"n\">5+<\/div>\r\n<div class=\"l\">New metal systems introduced in BEOL between 28 nm and 3 nm nodes<\/div>\r\n<\/div>\r\n<\/div>\r\n<p>Three fundamental shifts make advanced-node CMP categorically harder than mature-node CMP:<\/p>\r\n<ul>\r\n<li><strong>Tighter removal budgets:<\/strong> At sub-7 nm, the vertical feature budgets for each film are measured in single-digit nanometers. A CMP step that overshoots its target by 5 nm at 28 nm is a minor process annoyance; the same overpolish at 3 nm can completely consume a metal liner or damage the underlying device structure. This demands endpoint precision and slurry selectivity that earlier generations of consumables were never designed to provide.<\/li>\r\n<li><strong>Novel material systems:<\/strong> Each new node introduces metals (Co, Ru, Mo) and dielectrics (SiOC, SiCN, hafnium-based high-k films) for which standard CMP slurries were not formulated. A new CMP chemistry must be developed \u2014 often from scratch \u2014 for each new material, a process that can take 2\u20134 years of R&amp;D for a truly novel application.<\/li>\r\n<li><strong>Mechanical fragility of advanced structures:<\/strong> Ultra-low-k dielectrics have Young&#8217;s moduli as low as 2\u20135 GPa \u2014 orders of magnitude below the 70 GPa of thermal SiO\u2082. High-aspect-ratio 3D NAND structures and thin-film transistors in stacked 3D-IC integration can delaminate under CMP downforce levels that are routine for conventional planar processes.<\/li>\r\n<\/ul>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"finfet\">\r\n<h2>2. CMP Challenges in FinFET Architecture (14\u20137 nm)<\/h2>\r\n<p>FinFET technology, introduced in volume production at 22 nm (Intel) and 16\/14 nm (TSMC, Samsung), introduced a non-planar transistor geometry that immediately created new CMP challenges. The fin structures \u2014 narrow silicon pillars rising above the substrate surface \u2014 must survive CMP steps intended to planarize the surrounding dielectric material. Any lateral stress or excessive downforce during fin-area ILD CMP can damage or delaminate the fin structures themselves.<\/p>\r\n<h3>Key FinFET CMP Steps and Consumable Requirements<\/h3>\r\n<div class=\"jz-table-wrap\">\r\n<table class=\"jz-table\">\r\n<thead>\r\n<tr>\r\n<th>Process Step<\/th>\r\n<th>Film(s) Removed<\/th>\r\n<th>Critical Requirement<\/th>\r\n<th>Slurry Type<\/th>\r\n<th>Pad Preference<\/th>\r\n<\/tr>\r\n<\/thead>\r\n<tbody>\r\n<tr>\r\n<td>Fin reveal CMP<\/td>\r\n<td>SiO\u2082 STI fill<\/td>\r\n<td>Precise fin height control (\u00b10.5 nm)<\/td>\r\n<td>Low-MRR ceria with high selectivity additive<\/td>\r\n<td>Medium-hard; well-conditioned<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Gate dielectric protection CMP<\/td>\r\n<td>Poly-Si dummy gate<\/td>\r\n<td>Stop on high-k\/metal gate without thinning<\/td>\r\n<td>Dilute colloidal silica; very low downforce<\/td>\r\n<td>Soft; low downforce recipe<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Metal gate CMP (HKMG)<\/td>\r\n<td>W, TiN, TaN<\/td>\r\n<td>Metal fill planarization to gate level<\/td>\r\n<td>W slurry or barrier slurry<\/td>\r\n<td>Hard; standard conditioning<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Co contact CMP<\/td>\r\n<td>Cobalt overburden<\/td>\r\n<td>Co:dielectric selectivity; no galvanic corrosion<\/td>\r\n<td>Co-specific colloidal silica formulation<\/td>\r\n<td>Medium-hard or stacked composite<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>MOL ILD planarization<\/td>\r\n<td>SiO\u2082, SiOC<\/td>\r\n<td>Low downforce to protect underlying FinFET<\/td>\r\n<td>Low-MRR dilute slurry<\/td>\r\n<td>Soft to medium; reduced downforce<\/td>\r\n<\/tr>\r\n<\/tbody>\r\n<\/table>\r\n<\/div>\r\n<p>The introduction of cobalt as the contact metal at 7 nm (replacing tungsten for the most advanced contacts) was one of the most significant CMP chemistry transitions of the FinFET era. Cobalt&#8217;s lower hardness and sensitivity to galvanic corrosion required entirely new slurry formulations. For a detailed treatment of cobalt CMP chemistry, see Section 4 of this article and the broader slurry chemistry discussion in our <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/CMP-Slurry-Types-Applications-Selection-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">CMP Slurry Types, Applications &amp; Selection Guide<\/a>.<\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"gaa\">\r\n<h2>3. Gate-All-Around (GAA) and CMP at 3 nm and Below<\/h2>\r\n<p>Gate-All-Around (GAA) nanosheet transistors, currently in volume production at TSMC (N3), Samsung (3GAE), and Intel Foundry (18A), represent the most complex transistor geometry in semiconductor history. In GAA, horizontal silicon or SiGe nanosheets (typically 4\u20138 nm thick, stacked vertically in groups of 2\u20134) are completely surrounded by the gate dielectric and metal on all four sides \u2014 enabling superior electrostatic control but requiring extraordinary precision in the CMP steps that reveal, isolate, and planarize these structures.<\/p>\r\n<h3>Nanosheet Reveal CMP: The Most Demanding Planarity Step in Semiconductor Manufacturing<\/h3>\r\n<p>The nanosheet reveal step removes the SiO\u2082 or SiOC isolation fill deposited between GAA cell rows, stopping on the topmost nanosheet surface with a target residual film thickness tolerance of \u00b11\u20132 nm across the full 300 mm wafer. Achieving this requires:<\/p>\r\n<ul>\r\n<li>Nano-ceria slurry with D99 particle size below 100 nm to minimize nanosheet surface damage<\/li>\r\n<li>Extremely high SiO\u2082:Si\u2083N\u2084 and SiO\u2082:SiGe selectivity to preserve the topmost nanosheet surface and sidewall spacer<\/li>\r\n<li>Tight within-wafer MRR uniformity (&lt;1.5% 1\u03c3) to ensure no nanosheet surface is over-polished while residuals remain on the opposite side of the wafer<\/li>\r\n<li>Real-time optical endpoint detection with sub-nm sensitivity to stop the CMP step before the tolerance budget is exhausted<\/li>\r\n<\/ul>\r\n<div class=\"jz-hl\">\r\n<p>The pad system for GAA CMP steps must balance planarization efficiency (to resolve the substantial topography remaining after etching and deposition) with mechanical gentleness (to avoid applying destructive lateral stress to the fragile nanosheet stacks). Stacked composite pads with carefully selected sub-pad compressibility are the preferred configuration, combined with multi-zone carrier head pressure adjustment to compensate for radial non-uniformity in nanosheet height.<\/p>\r\n<\/div>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"cobalt\">\r\n<h2>4. Cobalt CMP: Chemistry, Challenges, and Defect Control<\/h2>\r\n<p>Cobalt has emerged as the preferred contact and local interconnect metal for advanced logic nodes at 7 nm and below, replacing tungsten for the most demanding applications due to its lower bulk resistivity at sub-20 nm feature sizes. However, cobalt&#8217;s physical and chemical properties create a very different and considerably more challenging CMP environment than tungsten.<\/p>\r\n<h3>Why Cobalt CMP Is Harder Than Tungsten CMP<\/h3>\r\n<ul>\r\n<li><strong>Cobalt is much softer than tungsten<\/strong> (Vickers hardness ~1,000 MPa for Co vs. ~3,430 MPa for W), meaning abrasive contact forces that are routine for W CMP can produce dishing or scratches on cobalt surfaces.<\/li>\r\n<li><strong>Cobalt is susceptible to galvanic corrosion<\/strong> at interfaces with dissimilar metals (particularly TiN barrier metal). In the presence of an oxidizing slurry, electrochemical potential differences between Co and TiN can drive anodic dissolution of cobalt at the contact perimeter \u2014 creating pitting defects that are not observable by standard optical inspection but degrade contact resistance and reliability.<\/li>\r\n<li><strong>Cobalt ion contamination<\/strong> (Co\u00b2\u207a, Co\u00b3\u207a) leached from the polished surface into the slurry bath is a source of metal contamination on wafer surfaces if not removed by post-CMP clean. Co is a deep-level trap in silicon and can cause serious device leakage if present at the transistor level.<\/li>\r\n<\/ul>\r\n<h3>Cobalt CMP Slurry Design Principles<\/h3>\r\n<p>Effective cobalt CMP slurry formulation requires balancing three competing requirements: sufficient oxidation of the cobalt surface to generate an abradable CoO\/Co(OH)\u2082 layer (for adequate MRR), corrosion inhibition at the Co\/TiN galvanic interface (to prevent pitting), and complexation of dissolved cobalt ions (to prevent re-deposition). The typical solution is:<\/p>\r\n<ul>\r\n<li>Mild oxidizer (H\u2082O\u2082 at 0.5\u20132 wt%, or periodate at low concentration) \u2014 moderate enough to form Co oxide without driving runaway corrosion<\/li>\r\n<li>Cobalt-specific corrosion inhibitors (imidazole, benzotriazole derivatives, or proprietary heterocyclic compounds) that adsorb preferentially on Co surfaces in contact with TiN<\/li>\r\n<li>Organic acid complexants (citric acid, malic acid) to solubilize Co ions and prevent re-deposition<\/li>\r\n<li>Ultra-low defect colloidal silica (20\u201350 nm, D99 &lt;150 nm) as the abrasive, operated at pH 4\u20137<\/li>\r\n<\/ul>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"ruthenium\">\r\n<h2>5. Ruthenium CMP: The Emerging Frontier<\/h2>\r\n<p>Ruthenium (Ru) is positioned as the next-generation metal for contacts, local interconnects, and gate fill at sub-5 nm nodes. Its advantages over cobalt include lower resistivity at nanometer dimensions, better thermal stability (Ru melting point: 2,334 \u00b0C vs. Co 1,495 \u00b0C), and improved compatibility with high-k gate dielectrics. Several leading foundries have disclosed Ru-based metallization schemes for their 2 nm and beyond process generations.<\/p>\r\n<h3>The Challenge of Ruthenium&#8217;s Chemical Inertness<\/h3>\r\n<p>Ruthenium is thermodynamically noble under most aqueous conditions \u2014 much more so than copper or cobalt. This chemical inertness, which is an advantage for device reliability, is a significant obstacle for CMP, where chemical reactivity of the target surface is a prerequisite for effective material removal. Standard copper and cobalt CMP slurries (H\u2082O\u2082-based, moderately acidic) achieve negligible MRR on Ru surfaces.<\/p>\r\n<p>Effective Ru oxidation requires either very strong oxidizers at low pH (periodate, bromate, or Ce\u2074\u207a species at pH 1\u20133) or electrochemical assistance. The primary oxidation product, RuO\u2084 (ruthenium tetroxide), is a volatile, toxic compound that can form at high oxidizer concentrations and temperatures, creating both process safety and contamination concerns. Managing the RuO\u2084 formation risk while maintaining adequate Ru MRR is the central challenge of Ru CMP chemistry development.<\/p>\r\n<p>As of April 2026, Ru CMP chemistry is actively transitioning from laboratory demonstration to process qualification at leading-edge fabs. JEEZ is engaged in Ru slurry R&amp;D and welcomes collaborative development partnerships with fabs working on Ru integration. <a href=\"https:\/\/jeez-semicon.com\/fr\/contact\/\" target=\"_blank\" rel=\"noopener noreferrer\">Contact us to discuss your requirements.<\/a><\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"molybdenum\">\r\n<h2>6. Molybdenum CMP for GAA Gate Fill<\/h2>\r\n<p>Molybdenum (Mo) is attracting strong interest as an alternative metal fill for GAA transistor gates, where its workfunction near mid-gap, good thermal stability, and lower gate resistance compared to tungsten at small dimensions make it competitive. Intel has disclosed Mo gate fill in their 18A process; other foundries are evaluating it for sub-2 nm generations.<\/p>\r\n<p>Mo CMP chemistry is distinctly different from other metal CMP applications. Molybdenum oxide (MoO\u2083) dissolves readily in alkaline solution (forming MoO\u2084\u00b2\u207b), which creates an unusual situation: a strongly alkaline slurry can achieve high Mo MRR purely through chemical dissolution, without requiring aggressive abrasion. However, this same solubility creates dishing risk in wide Mo features if the chemical etch rate is not carefully controlled by surface-blocking additives.<\/p>\r\n<p>Acidic oxidizing slurries (pH 2\u20134 with peroxydisulfate or periodate) can also be used for Mo CMP, converting Mo to MoO\u2082 or MoO\u2083 surface layers that are mechanically removable. The choice between alkaline-dissolution and acidic-oxidation chemistry depends on the specific selectivity requirements of the gate stack \u2014 particularly the need to stop cleanly on the high-k gate dielectric without thinning it.<\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"lowk\">\r\n<h2>7. Ultra-Low-k Dielectric CMP: Mechanical Fragility and Selectivity<\/h2>\r\n<p>The progressive reduction in dielectric constant (k) required to reduce RC delay in BEOL interconnects has produced a family of ultra-low-k (ULK) porous dielectric films with Young&#8217;s moduli as low as 2\u20135 GPa and fracture toughnesses approaching those of aerogels. CMP of copper and barrier metals in these fragile dielectric environments is one of the most technically demanding processes in advanced logic manufacturing.<\/p>\r\n<h3>Failure Modes Specific to Ultra-Low-k CMP<\/h3>\r\n<ul>\r\n<li><strong>Dielectric delamination:<\/strong> The interface between the ULK film and the etch stop (typically SiCN or SiCO) is the weakest mechanical plane in the entire interconnect stack. Excessive CMP downforce or lateral shear stress can cause interface delamination that propagates laterally, creating voids in the interconnect layer.<\/li>\r\n<li><strong>Cohesive fracture within the dielectric:<\/strong> For the most porous ULK films (k &lt; 2.2), the film itself can fracture cohesively under downforce, creating a rough, cracked surface that cannot be recovered by subsequent processing.<\/li>\r\n<li><strong>Slurry infiltration into open pores:<\/strong> If the slurry&#8217;s liquid phase wets and penetrates the open pore network of the ULK material, it can carry abrasive particles and metal ions into the film&#8217;s interior \u2014 causing dielectric constant increase, leakage, and reliability degradation.<\/li>\r\n<\/ul>\r\n<p>The standard mitigation approach for ULK CMP combines low-downforce process conditions (typically &lt;1.5 psi wafer pressure), soft polishing pads with low modulus, and slurry formulations with low abrasive concentration and surfactant systems that reduce slurry infiltration into open pores. These constraints severely limit the available MRR and require careful endpoint control to compensate for the reduced process margin.<\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"3dnand\">\r\n<h2>8. CMP for 3D NAND: High Aspect Ratio and Multi-Layer Demands<\/h2>\r\n<p>3D NAND flash memory, which stacks memory cells vertically in layer counts ranging from 96 layers (2019 vintage) to 300+ layers (leading products in 2026), requires CMP at multiple points in the fabrication sequence. The most challenging CMP steps in 3D NAND involve planarizing the alternating oxide-nitride (ON) or oxide-polysilicon stack after each tier deposition, and removing tungsten or molybdenum wordline fill material after the gate-replacement process.<\/p>\r\n<div class=\"jz-hl\">\r\n<p>The extreme aspect ratios of 3D NAND structures (channel holes with aspect ratios exceeding 60:1 in leading-edge devices) create unique CMP boundary conditions. The polishing pressure distribution at the top of the structure is different from that at the periphery, and slurry penetration into the high-aspect-ratio holes during polishing can carry abrasive particles that later become trapped residues. CMP slurry formulations for 3D NAND are engineered with particle size distributions and surfactant packages specifically designed to minimize penetration into high-aspect-ratio features.<\/p>\r\n<\/div>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"3dic\">\r\n<h2>9. 3D-IC and Hybrid Bonding: The Sub-Nanometer Roughness Challenge<\/h2>\r\n<p>Hybrid bonding is the enabling technology for the highest-density 3D-IC integration \u2014 used in High-Bandwidth Memory (HBM), CMOS Image Sensors (CIS), and advanced logic-on-logic stacking. In hybrid bonding, two wafers are joined through direct dielectric-to-dielectric contact (SiO\u2082 or SiCN bonding surfaces) and Cu-to-Cu metal pad contact, without any adhesive or solder intermediate layer. The bond forms through surface chemistry and thermal activation, and its quality depends critically on the planarity and roughness of both bonding surfaces.<\/p>\r\n<h3>CMP Specifications for Hybrid Bonding Layer Preparation<\/h3>\r\n<div class=\"jz-table-wrap\">\r\n<table class=\"jz-table\">\r\n<thead>\r\n<tr>\r\n<th>Param\u00e8tres<\/th>\r\n<th>Hybrid Bonding Target<\/th>\r\n<th>Conventional BEOL CMP Target<\/th>\r\n<th>Ratio (Hybrid\/Conventional)<\/th>\r\n<\/tr>\r\n<\/thead>\r\n<tbody>\r\n<tr>\r\n<td>Surface roughness Ra<\/td>\r\n<td>&lt;0.3 nm<\/td>\r\n<td>&lt;1\u20132 nm<\/td>\r\n<td>5\u20137\u00d7 tighter<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Surface particle count (&gt;50 nm)<\/td>\r\n<td>&lt;10 per wafer<\/td>\r\n<td>&lt;50\u2013100 per wafer<\/td>\r\n<td>5\u201310\u00d7 tighter<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Cu dishing<\/td>\r\n<td>&lt;5 nm<\/td>\r\n<td>&lt;20\u201330 nm<\/td>\r\n<td>4\u20136\u00d7 tighter<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Dielectric step height<\/td>\r\n<td>&lt;3 nm<\/td>\r\n<td>&lt;10\u201320 nm<\/td>\r\n<td>3\u20137\u00d7 tighter<\/td>\r\n<\/tr>\r\n<tr>\r\n<td>Post-CMP metal contamination<\/td>\r\n<td>&lt;1\u00d710\u00b9\u2070 atoms\/cm\u00b2<\/td>\r\n<td>&lt;1\u00d710\u00b9\u00b9 atoms\/cm\u00b2<\/td>\r\n<td>10\u00d7 tighter<\/td>\r\n<\/tr>\r\n<\/tbody>\r\n<\/table>\r\n<\/div>\r\n<p>Meeting these specifications requires ultra-pure, sub-30 nm colloidal silica slurries at concentrations below 2 wt%, combined with soft polishing pads operating at ultra-low downforce (&lt;1 psi). Extended multi-step post-CMP cleaning \u2014 typically including SC1 (APM), DHF, and megasonic rinse \u2014 is mandatory to achieve the surface particle and metal contamination targets.<\/p>\r\n<p>For slurry selection guidance in this application, see our article on <a href=\"https:\/\/jeez-semicon.com\/fr\/blog\/CMP-Abrasives-Ceria-vs-Silica-vs-Alumina\/\" target=\"_blank\" rel=\"noopener noreferrer\">CMP Abrasives: Ceria vs. Silica vs. Alumina<\/a>, particularly the colloidal silica section covering bonding-grade ultra-pure variants.<\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"roadmap\">\r\n<h2>10. CMP Materials Roadmap: 2026 to 2030<\/h2>\r\n<div class=\"jz-timeline\">\r\n<div class=\"jz-tl-item\">\r\n<div class=\"jz-tl-dot\">\u00a0<\/div>\r\n<div class=\"jz-tl-body\"><strong>2026: Ru and Mo slurry maturation<\/strong> Commercial Ru and Mo CMP slurry products transitioning from qualification to initial production use at leading-edge fabs; Co slurry second-generation products with improved galvanic corrosion control entering high-volume production.<\/div>\r\n<\/div>\r\n<div class=\"jz-tl-item\">\r\n<div class=\"jz-tl-dot\">\u00a0<\/div>\r\n<div class=\"jz-tl-body\"><strong>2027: GAA nanosheet reveal CMP standardization<\/strong> Process recipes for 3 nm and 2 nm nanosheet reveal CMP standardizing across TSMC, Samsung, and Intel Foundry; nano-ceria with Mn-doping or core-shell morphology becoming the abrasive of choice for this application.<\/div>\r\n<\/div>\r\n<div class=\"jz-tl-item\">\r\n<div class=\"jz-tl-dot\">\u00a0<\/div>\r\n<div class=\"jz-tl-body\"><strong>2028: Backside power delivery CMP<\/strong> Backside power rail architecture (BSPDN) requires new CMP steps for wafer thinning, via reveal, and backside metallization planarization; introduces silicon thinning slurries and new pad systems optimized for thinned-wafer handling.<\/div>\r\n<\/div>\r\n<div class=\"jz-tl-item\">\r\n<div class=\"jz-tl-dot\">\u00a0<\/div>\r\n<div class=\"jz-tl-body\"><strong>2029\u20132030: 1.4 nm and 2D material integration<\/strong> First CMP challenges for 2D semiconductor channels (MoS\u2082, WSe\u2082) in research environments; graphene diffusion barrier CMP development; potential introduction of electrochemical CMP (ECMP) for sub-nm removal rate control at these extreme geometry levels.<\/div>\r\n<\/div>\r\n<\/div>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<section id=\"faq\">\r\n<h2>11. FAQ<\/h2>\r\n<h3>What is the difference between CMP requirements at 7 nm vs. 3 nm?<\/h3>\r\n<p>The 7 nm node primarily introduced cobalt contacts and tighter selectivity requirements for STI and ILD CMP. At 3 nm (GAA architecture), the challenges escalate dramatically: CMP must now handle nanosheet reveal with sub-2 nm vertical precision, gate fill with novel metals (Ru or Mo), and ultra-low-k dielectric environments with Young&#8217;s moduli below 5 GPa. The number of CMP steps also increases by approximately 30\u201340% between 7 nm and 3 nm, compounding the cost and yield implications of each per-step performance gap.<\/p>\r\n<h3>Can standard CMP slurries be used for cobalt and ruthenium?<\/h3>\r\n<p>No. Standard copper or tungsten CMP slurries are not suitable for cobalt or ruthenium. Cobalt requires specially formulated slurries with cobalt-specific corrosion inhibitors and mild oxidizers balanced against galvanic corrosion risk at Co\/TiN interfaces. Ruthenium requires strongly oxidizing acidic chemistries (periodate or Ce\u2074\u207a based) that are completely different from any other commercial CMP application. Using the wrong slurry chemistry on these metals risks severe defect events, contamination, or complete inability to remove the film within the process time budget.<\/p>\r\n<h3>What makes hybrid bonding CMP different from standard copper CMP?<\/h3>\r\n<p>The fundamental difference is the surface quality requirement. Standard copper BEOL CMP targets dishing &lt;20\u201330 nm and scratch counts in the tens per wafer. Hybrid bonding CMP must achieve Cu dishing below 5 nm, surface roughness below 0.3 nm Ra, and fewer than 10 particles per wafer above 50 nm \u2014 specifications that are 5\u201310\u00d7 tighter than conventional CMP on every metric. Achieving these targets requires ultra-dilute nano-silica slurries, soft polishing pads at ultra-low downforce, and multi-step post-CMP cleaning sequences that are more akin to wafer cleaning than to conventional CMP cleanup.<\/p>\r\n<h3>How many CMP steps does a 3 nm logic wafer require?<\/h3>\r\n<p>A fully processed 3 nm logic wafer (including FEOL, MOL, and BEOL through the final metallization layer) requires approximately 50\u201370 CMP process steps, depending on the specific process flow and integration scheme. This compares to approximately 30\u201340 steps at 10 nm, 15\u201320 steps at 28 nm, and fewer than 10 at 180 nm. Each additional CMP step represents an opportunity for yield loss from defects, non-uniformity, or contamination, which is why advanced-node CMP consumable performance standards are so much more stringent than at mature nodes.<\/p>\r\n<\/section>\r\n<hr class=\"jz-divider\" \/>\r\n<div class=\"jz-tags\"><span class=\"jz-tag\">Advanced Node CMP<\/span><span class=\"jz-tag\">FinFET CMP<\/span><span class=\"jz-tag\">GAA CMP<\/span> <span class=\"jz-tag\">Cobalt CMP<\/span><span class=\"jz-tag\">Ruthenium CMP<\/span><span class=\"jz-tag\">3D-IC CMP<\/span> <span class=\"jz-tag\">Hybrid Bonding<\/span><span class=\"jz-tag\">3D NAND<\/span><span class=\"jz-tag\">JEEZ<\/span><\/div>\r\n<div class=\"jz-cta\">\r\n<h2>Partner with JEEZ on Advanced-Node CMP Development<\/h2>\r\n<p>JEEZ offers advanced-node CMP slurry and pad products qualified for sub-14 nm applications, including Co CMP and emerging Ru chemistry development. Engage our application engineering team for a technical consultation.<\/p>\r\n<a class=\"jz-btn\" href=\"https:\/\/jeez-semicon.com\/fr\/contact\/\" target=\"_blank\" rel=\"noopener noreferrer\">Discuss Your Advanced Node CMP Needs<\/a> <a class=\"jz-btn-sec\" href=\"https:\/\/jeez-semicon.com\/fr\/blog\/What-Are-CMP-Materials-Complete-Guide\/\" target=\"_blank\" rel=\"noopener noreferrer\">\u2190 CMP Materials Complete Guide<\/a><\/div>\r\n<\/div>","protected":false},"excerpt":{"rendered":"<p>JEEZ Technical Guide \u00b7 Advanced Node CMP A comprehensive technical guide to CMP consumable requirements for FinFET, Gate-All-Around, 3D NAND, and 3D-IC architectures \u2014 covering novel metal chemistries, ultra-low-k challenges,  &#8230;<\/p>","protected":false},"author":1,"featured_media":1954,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[9,59],"tags":[],"class_list":["post-1929","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-blog","category-industry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1929","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/comments?post=1929"}],"version-history":[{"count":4,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1929\/revisions"}],"predecessor-version":[{"id":1962,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/posts\/1929\/revisions\/1962"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media\/1954"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media?parent=1929"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/categories?post=1929"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/tags?post=1929"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}