{"id":865,"date":"2025-12-10T17:39:04","date_gmt":"2025-12-10T09:39:04","guid":{"rendered":"https:\/\/jeez-semicon.com\/?post_type=semiconductor&p=865"},"modified":"2026-01-08T14:24:03","modified_gmt":"2026-01-08T06:24:03","slug":"silicon-carbide-substrate-grinding-and-polishing","status":"publish","type":"semiconductor","link":"https:\/\/jeez-semicon.com\/fr\/semiconductor\/silicon-carbide-substrate-grinding-and-polishing\/","title":{"rendered":"Pr\u00e9polissage et polissage de substrats en carbure de silicium"},"content":{"rendered":"

Caract\u00e9ristiques du produit<\/strong><\/p>\n\n\n\n

JIZHI Electronics has developed a four-step SiC polishing process that combines different grades of grinding slurries, polishing slurries, and polishing pads (coarse grinding pad, fine grinding pad, rough polishing pad, and final polishing pad). This process improves the surface quality of silicon carbide substrates in grinding and polishing applications while significantly increasing the material removal rate.<\/p>\n\n\n\n

Process and Applications<\/strong><\/p>\n\n\n\n

Suitable for SiC silicon carbide substrate DMP and CMP process flows, effectively improving efficiency and yield. The silicon carbide polishing slurries and polishing pads enable localized (domestic) replacement of imported products.<\/p>\n\n\n\n

Brief Overview of the Silicon Carbide Substrate Processing Flow<\/strong><\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

Silicon Carbide (SiC) Grinding Process \u2013 Rough Grinding \/ Fine Grinding<\/strong><\/p>\n\n\n\n

Step1<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Rough Grinding Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Double-Sided Rough Grinding Process<\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
Boues de polissage<\/td>\n JZ-8003<\/td>\n <\/tr>\n
Tampon de polissage<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Pressure<\/td>\n 3 psi<\/td>\n <\/tr>\n
Upper Platen Rotation Speed<\/td>\n 25 rpm<\/td>\n <\/tr>\n
Lower Platen Rotation Speed<\/td>\n 10 rpm<\/td>\n <\/tr>\n
Slurry Flow Rate<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 25-30um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 1.22nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bow<\/td>\n <10<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n Rough Grinding \u00b7 Used with Lapping Pad\n <\/th>\n <\/tr>\n
\n Lapping Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-1020<\/td>\n <\/tr>\n
\u00c9paisseur<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n Personnalisable<\/td>\n <\/tr>\n
Duret\u00e9<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
Taux de compression<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

Step2<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Fine Grinding Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Double-Sided Rough Grinding Process<\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
Boues de polissage<\/td>\n JZ-8001<\/td>\n <\/tr>\n
Tampon de polissage<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Pressure<\/td>\n 3 psi<\/td>\n <\/tr>\n
Upper Platen Rotation Speed<\/td>\n 25 rpm<\/td>\n <\/tr>\n
Lower Platen Rotation Speed<\/td>\n 10 rpm<\/td>\n <\/tr>\n
Slurry Flow Rate<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 6.8um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.45nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bow<\/td>\n <20<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n ine Grinding \u00b7 Used with Lapping Pad\n <\/th>\n <\/tr>\n
\n Lapping Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-1020<\/td>\n <\/tr>\n
\u00c9paisseur<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n Personnalisable<\/td>\n <\/tr>\n
Duret\u00e9<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
Taux de compression<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

JIZHI Electronics\u2019 CMP rough and fine grinding process for SiC substrates<\/strong><\/p>\n\n\n\n

Tip 1 \u2013 Using rough grinding slurry with a lapping pad, Ra can reach 1.22 nm or lower.
Tip 2 \u2013 Using fine grinding slurry with a lapping pad, Ra can reach 0.45 nm or lower.<\/p>\n\n\n\n

Silicon Carbide (SiC) Polishing Process \u2013 Rough Polishing \/ Fine Polishing<\/strong><\/p>\n\n\n\n

Step3<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Rough Polishing Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n
\n SiC Substrate CMP Rough Polishing Process\n <\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
Boues de polissage<\/td>\n JZ-8010<\/td>\n <\/tr>\n
Tampon de polissage<\/td>\n JZ-3020<\/td>\n <\/tr>\n
Pressure<\/td>\n 350g\/cm2<\/td>\n <\/tr>\n
Rotation Speed<\/td>\n 40 rpm<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 2.5um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.13nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n
\n Rough Polishing Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-3020<\/td>\n <\/tr>\n
\u00c9paisseur<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n Personnalisable<\/td>\n <\/tr>\n
Duret\u00e9<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
Taux de compression<\/td>\n 2.94<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

Step4<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Final Polishing Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n
\n SiC Substrate CMP Rough Polishing Process\n <\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
Boues de polissage<\/td>\n JZ-8020<\/td>\n <\/tr>\n
Tampon de polissage<\/td>\n JZ-326<\/td>\n <\/tr>\n
Pressure<\/td>\n 300g\/cm2<\/td>\n <\/tr>\n
Rotation Speed<\/td>\n 40 rpm<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 0.25um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.06nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n
\n Rough Polishing Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n\n
Model<\/td>\n JZ-326<\/td>\n <\/tr>\n\n
\u00c9paisseur<\/td>\n 1.3 mm<\/td>\n <\/tr>\n\n
Groove Pattern<\/td>\n Personnalisable<\/td>\n <\/tr>\n\n
Duret\u00e9<\/td>\n Shore A 51\u00b0<\/td>\n <\/tr>\n\n
Taux de compression<\/td>\n 10.77<\/td>\n <\/tr>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

JIZHI Electronics\u2019 CMP rough and final polishing process for SiC substrates<\/strong><\/p>\n\n\n\n

Tip 3 \u2013 Using rough polishing slurry with a lapping pad, Ra can reach 0.13 nm or lower.
Tip 4 \u2013 Using final polishing slurry with a final polishing pad, Ra can reach 0.06 nm or lower.<\/p>\n\n\n\n

Recommended Products and Parameters for Silicon Carbide Grinding \/ Polishing Processes<\/strong><\/p>\n\n\n\n\n \n \n \n \n \n \n \n \n
Processing Method<\/th>\n Recommended Products<\/th>\n Removal Rate<\/th>\n Surface Quality<\/th>\n <\/tr>\n
Boues de polissage<\/th>\n Tampon de polissage<\/th>\n <\/tr>\n <\/thead>\n\n
Final Polishing<\/td>\n Grinding \/ Lapping<\/td>\n JZ-8003<\/td>\n JZ-1020<\/td>\n 25-30um\/H<\/td>\n 1.22nm<\/td>\n <\/tr>\n
Final Polishing<\/td>\n JZ-8001<\/td>\n JZ-1020<\/td>\n 6.8um\/H<\/td>\n 0.45nm<\/td>\n <\/tr>\n\n
Polissage<\/td>\n Rough Polishing<\/td>\n JZ-8010<\/td>\n JZ-3020<\/td>\n 2.5um\/H<\/td>\n 0.13nm<\/td>\n <\/tr>\n
Final Polishing<\/td>\n JZ-8020A
JZ-8020B<\/td>\n 		JZ-326<\/td>\n 0.25um\/H<\/td>\n 0.06nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry<\/strong><\/p>\n\n\n\n

Stocker dans un entrep\u00f4t bien ventil\u00e9, frais et sec. Le produit doit \u00eatre stock\u00e9 \u00e0 une temp\u00e9rature comprise entre 5 et 35 \u00b0C, \u00e0 l'abri de la lumi\u00e8re directe du soleil et du gel. S'il est stock\u00e9 \u00e0 une temp\u00e9rature inf\u00e9rieure \u00e0 0 \u00b0C, une agglom\u00e9ration irr\u00e9versible peut se produire, rendant le produit inutilisable.<\/p>\n\n\n\n

Prix des liquides de polissage CMP \/ Slurry de JIZHI Electronics<\/strong><\/p>\n\n\n\n

Les boues de polissage des m\u00e9taux CMP de JIZHI Electronics sont fabriqu\u00e9es \u00e0 l'aide de technologies et d'\u00e9quipements de production avanc\u00e9s \u00e0 l'\u00e9tranger et sont formul\u00e9es avec des compositions chimiques sp\u00e9cialis\u00e9es. La qualit\u00e9 des boues de polissage de JIZHI Electronics est comparable \u00e0 celle de produits import\u00e9s similaires.<\/p>\n\n\n\n

Gr\u00e2ce \u00e0 une production locale, les boues CMP de JIZHI Electronics offrent des d\u00e9lais de livraison courts, une haute qualit\u00e9 stable et des prix comp\u00e9titifs et rentables.<\/p>","protected":false},"excerpt":{"rendered":"

Product Features JIZHI Electronics has developed a four-step SiC polishing process that combines different grades of grinding slurries, polishing slurries, and polishing pads (coarse grinding pad, fine grinding pad, rough …<\/p>","protected":false},"featured_media":1295,"template":"","categories":[],"tags":[],"semicategories":[50],"class_list":["post-865","semiconductor","type-semiconductor","status-publish","has-post-thumbnail","hentry","semicategories-polishing_slurry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/semiconductor\/865","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/semiconductor"}],"about":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/types\/semiconductor"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media\/1295"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/media?parent=865"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/categories?post=865"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/tags?post=865"},{"taxonomy":"semicategories","embeddable":true,"href":"https:\/\/jeez-semicon.com\/fr\/wp-json\/wp\/v2\/semicategories?post=865"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}