{"id":865,"date":"2025-12-10T17:39:04","date_gmt":"2025-12-10T09:39:04","guid":{"rendered":"https:\/\/jeez-semicon.com\/?post_type=semiconductor&p=865"},"modified":"2026-01-08T14:24:03","modified_gmt":"2026-01-08T06:24:03","slug":"silicon-carbide-substrate-grinding-and-polishing","status":"publish","type":"semiconductor","link":"https:\/\/jeez-semicon.com\/ru\/semiconductor\/silicon-carbide-substrate-grinding-and-polishing\/","title":{"rendered":"\u0428\u043b\u0438\u0444\u043e\u0432\u043a\u0430 \u0438 \u043f\u043e\u043b\u0438\u0440\u043e\u0432\u043a\u0430 \u043f\u043e\u0434\u043b\u043e\u0436\u0435\u043a \u0438\u0437 \u043a\u0430\u0440\u0431\u0438\u0434\u0430 \u043a\u0440\u0435\u043c\u043d\u0438\u044f"},"content":{"rendered":"

\u0425\u0430\u0440\u0430\u043a\u0442\u0435\u0440\u0438\u0441\u0442\u0438\u043a\u0438 \u0442\u043e\u0432\u0430\u0440\u0430<\/strong><\/p>\n\n\n\n

JIZHI Electronics has developed a four-step SiC polishing process that combines different grades of grinding slurries, polishing slurries, and polishing pads (coarse grinding pad, fine grinding pad, rough polishing pad, and final polishing pad). This process improves the surface quality of silicon carbide substrates in grinding and polishing applications while significantly increasing the material removal rate.<\/p>\n\n\n\n

Process and Applications<\/strong><\/p>\n\n\n\n

Suitable for SiC silicon carbide substrate DMP and CMP process flows, effectively improving efficiency and yield. The silicon carbide polishing slurries and polishing pads enable localized (domestic) replacement of imported products.<\/p>\n\n\n\n

Brief Overview of the Silicon Carbide Substrate Processing Flow<\/strong><\/p>\n\n\n\n

\"\"<\/figure>\n\n\n\n

Silicon Carbide (SiC) Grinding Process \u2013 Rough Grinding \/ Fine Grinding<\/strong><\/p>\n\n\n\n

Step1<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Rough Grinding Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Double-Sided Rough Grinding Process<\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043e\u0447\u043d\u044b\u0439 \u0448\u043b\u0430\u043c<\/td>\n JZ-8003<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u0430\u043b\u044c\u043d\u044b\u0439 \u0434\u0438\u0441\u043a<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Pressure<\/td>\n 3 psi<\/td>\n <\/tr>\n
Upper Platen Rotation Speed<\/td>\n 25 rpm<\/td>\n <\/tr>\n
Lower Platen Rotation Speed<\/td>\n 10 rpm<\/td>\n <\/tr>\n
Slurry Flow Rate<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 25-30um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 1.22nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bow<\/td>\n <10<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n Rough Grinding \u00b7 Used with Lapping Pad\n <\/th>\n <\/tr>\n
\n Lapping Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-1020<\/td>\n <\/tr>\n
\u0422\u043e\u043b\u0449\u0438\u043d\u0430<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n \u041d\u0430\u0441\u0442\u0440\u0430\u0438\u0432\u0430\u0435\u043c\u044b\u0439<\/td>\n <\/tr>\n
\u0422\u0432\u0435\u0440\u0434\u043e\u0441\u0442\u044c<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
\u0421\u0442\u0435\u043f\u0435\u043d\u044c \u0441\u0436\u0430\u0442\u0438\u044f<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

Step2<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Fine Grinding Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n \n
SiC Double-Sided Rough Grinding Process<\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043e\u0447\u043d\u044b\u0439 \u0448\u043b\u0430\u043c<\/td>\n JZ-8001<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u0430\u043b\u044c\u043d\u044b\u0439 \u0434\u0438\u0441\u043a<\/td>\n JZ-1020<\/td>\n <\/tr>\n
Pressure<\/td>\n 3 psi<\/td>\n <\/tr>\n
Upper Platen Rotation Speed<\/td>\n 25 rpm<\/td>\n <\/tr>\n
Lower Platen Rotation Speed<\/td>\n 10 rpm<\/td>\n <\/tr>\n
Slurry Flow Rate<\/td>\n 5L \/min<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 6.8um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.45nm<\/td>\n <\/tr>\n
TTV (Total Thickness Variation)<\/td>\n <2<\/td>\n <\/tr>\n
Warp<\/td>\n <30<\/td>\n <\/tr>\n
Bow<\/td>\n <20<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n \n
\n ine Grinding \u00b7 Used with Lapping Pad\n <\/th>\n <\/tr>\n
\n Lapping Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-1020<\/td>\n <\/tr>\n
\u0422\u043e\u043b\u0449\u0438\u043d\u0430<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n \u041d\u0430\u0441\u0442\u0440\u0430\u0438\u0432\u0430\u0435\u043c\u044b\u0439<\/td>\n <\/tr>\n
\u0422\u0432\u0435\u0440\u0434\u043e\u0441\u0442\u044c<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
\u0421\u0442\u0435\u043f\u0435\u043d\u044c \u0441\u0436\u0430\u0442\u0438\u044f<\/td>\n 2.92<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

JIZHI Electronics\u2019 CMP rough and fine grinding process for SiC substrates<\/strong><\/p>\n\n\n\n

Tip 1 \u2013 Using rough grinding slurry with a lapping pad, Ra can reach 1.22 nm or lower.
Tip 2 \u2013 Using fine grinding slurry with a lapping pad, Ra can reach 0.45 nm or lower.<\/p>\n\n\n\n

Silicon Carbide (SiC) Polishing Process \u2013 Rough Polishing \/ Fine Polishing<\/strong><\/p>\n\n\n\n

Step3<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Rough Polishing Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n
\n SiC Substrate CMP Rough Polishing Process\n <\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043e\u0447\u043d\u044b\u0439 \u0448\u043b\u0430\u043c<\/td>\n JZ-8010<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u0430\u043b\u044c\u043d\u044b\u0439 \u0434\u0438\u0441\u043a<\/td>\n JZ-3020<\/td>\n <\/tr>\n
Pressure<\/td>\n 350g\/cm2<\/td>\n <\/tr>\n
Rotation Speed<\/td>\n 40 rpm<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 2.5um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.13nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n \n \n
\n Rough Polishing Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n <\/thead>\n\n
Model<\/td>\n JZ-3020<\/td>\n <\/tr>\n
\u0422\u043e\u043b\u0449\u0438\u043d\u0430<\/td>\n 1.4 mm<\/td>\n <\/tr>\n
Groove Pattern<\/td>\n \u041d\u0430\u0441\u0442\u0440\u0430\u0438\u0432\u0430\u0435\u043c\u044b\u0439<\/td>\n <\/tr>\n
\u0422\u0432\u0435\u0440\u0434\u043e\u0441\u0442\u044c<\/td>\n Shore A 85\u00b0<\/td>\n <\/tr>\n
\u0421\u0442\u0435\u043f\u0435\u043d\u044c \u0441\u0436\u0430\u0442\u0438\u044f<\/td>\n 2.94<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

Step4<\/strong>
JIZHI Electronics Silicon Carbide (SiC) Final Polishing Process<\/p>\n\n\n\n

\n
\n\n \n \n \n \n \n \n \n \n \n \n \n
\n SiC Substrate CMP Rough Polishing Process\n <\/th>\n <\/tr>\n <\/thead>\n
Verification Equipment<\/td>\n \u53cc\u976236B<\/td>\n <\/tr>\n
Wafer<\/td>\n 6″SiC<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043e\u0447\u043d\u044b\u0439 \u0448\u043b\u0430\u043c<\/td>\n JZ-8020<\/td>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u0430\u043b\u044c\u043d\u044b\u0439 \u0434\u0438\u0441\u043a<\/td>\n JZ-326<\/td>\n <\/tr>\n
Pressure<\/td>\n 300g\/cm2<\/td>\n <\/tr>\n
Rotation Speed<\/td>\n 40 rpm<\/td>\n <\/tr>\n
Polishing Rate<\/td>\n 0.25um\/H<\/td>\n <\/tr>\n
Surface Roughness<\/td>\n 0.06nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n<\/div>\n\n\n\n
\n
\"\"<\/figure>\n<\/div>\n\n
\n
\"\"<\/figure>\n<\/div><\/div>\n\n\n\n
\n\n \n \n \n \n \n \n
\n Rough Polishing Pad Dimensions and Specifications\n <\/th>\n <\/tr>\n\n
Model<\/td>\n JZ-326<\/td>\n <\/tr>\n\n
\u0422\u043e\u043b\u0449\u0438\u043d\u0430<\/td>\n 1.3 mm<\/td>\n <\/tr>\n\n
Groove Pattern<\/td>\n \u041d\u0430\u0441\u0442\u0440\u0430\u0438\u0432\u0430\u0435\u043c\u044b\u0439<\/td>\n <\/tr>\n\n
\u0422\u0432\u0435\u0440\u0434\u043e\u0441\u0442\u044c<\/td>\n Shore A 51\u00b0<\/td>\n <\/tr>\n\n
\u0421\u0442\u0435\u043f\u0435\u043d\u044c \u0441\u0436\u0430\u0442\u0438\u044f<\/td>\n 10.77<\/td>\n <\/tr>\n<\/table>\n\n\n\n
\"\"<\/figure>\n<\/div>\n<\/div>\n\n\n\n

JIZHI Electronics\u2019 CMP rough and final polishing process for SiC substrates<\/strong><\/p>\n\n\n\n

Tip 3 \u2013 Using rough polishing slurry with a lapping pad, Ra can reach 0.13 nm or lower.
Tip 4 \u2013 Using final polishing slurry with a final polishing pad, Ra can reach 0.06 nm or lower.<\/p>\n\n\n\n

Recommended Products and Parameters for Silicon Carbide Grinding \/ Polishing Processes<\/strong><\/p>\n\n\n\n\n \n \n \n \n \n \n \n \n
Processing Method<\/th>\n Recommended Products<\/th>\n Removal Rate<\/th>\n Surface Quality<\/th>\n <\/tr>\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043e\u0447\u043d\u044b\u0439 \u0448\u043b\u0430\u043c<\/th>\n \u041f\u043e\u043b\u0438\u0440\u043e\u0432\u0430\u043b\u044c\u043d\u044b\u0439 \u0434\u0438\u0441\u043a<\/th>\n <\/tr>\n <\/thead>\n\n
Final Polishing<\/td>\n Grinding \/ Lapping<\/td>\n JZ-8003<\/td>\n JZ-1020<\/td>\n 25-30um\/H<\/td>\n 1.22nm<\/td>\n <\/tr>\n
Final Polishing<\/td>\n JZ-8001<\/td>\n JZ-1020<\/td>\n 6.8um\/H<\/td>\n 0.45nm<\/td>\n <\/tr>\n\n
\u041f\u043e\u043b\u0438\u0440\u043e\u0432\u043a\u0430<\/td>\n \u0413\u0440\u0443\u0431\u0430\u044f \u043f\u043e\u043b\u0438\u0440\u043e\u0432\u043a\u0430<\/td>\n JZ-8010<\/td>\n JZ-3020<\/td>\n 2.5um\/H<\/td>\n 0.13nm<\/td>\n <\/tr>\n
Final Polishing<\/td>\n JZ-8020A
JZ-8020B<\/td>\n 		JZ-326<\/td>\n 0.25um\/H<\/td>\n 0.06nm<\/td>\n <\/tr>\n <\/tbody>\n<\/table>\n\n\n\n

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry<\/strong><\/p>\n\n\n\n

Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5\u201335 \u00b0C, protected from direct sunlight and from freezing. If stored below 0 \u00b0C, irreversible agglomeration may occur, rendering the product unusable.<\/p>\n\n\n\n

Pricing of JIZHI Electronics CMP \/ Slurry Polishing Liquids<\/strong><\/p>\n\n\n\n

JIZHI Electronics\u2019 CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics\u2019 polishing slurries is comparable to that of similar imported products.<\/p>\n\n\n\n

Thanks to localized production, JIZHI Electronics\u2019 CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.<\/p>","protected":false},"excerpt":{"rendered":"

Product Features JIZHI Electronics has developed a four-step SiC polishing process that combines different grades of grinding slurries, polishing slurries, and polishing pads (coarse grinding pad, fine grinding pad, rough …<\/p>","protected":false},"featured_media":1295,"template":"","categories":[],"tags":[],"semicategories":[50],"class_list":["post-865","semiconductor","type-semiconductor","status-publish","has-post-thumbnail","hentry","semicategories-polishing_slurry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/semiconductor\/865","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/semiconductor"}],"about":[{"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/types\/semiconductor"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/media\/1295"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/media?parent=865"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/categories?post=865"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/tags?post=865"},{"taxonomy":"semicategories","embeddable":true,"href":"https:\/\/jeez-semicon.com\/ru\/wp-json\/wp\/v2\/semicategories?post=865"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}