Uniform colloidal SiO2 abrasive for consistent performance
Low metal ion content results in low surface roughness
Easy cleaning with high dilution ratios
Formula adjustable to control removal rate and dishing
Product Name
Copper CMP Polishing Liquid
Copper Chemical Mechanical Polishing (CMP) Slurry Functions：
Designed for coarse and fine polishing of 4–12 inch copper-coated wafers and copper interconnects, this slurry uses a uniform SiO2 colloidal abrasive and inhibitors to remove copper quickly then slow down to minimize dishing and defects. It delivers stable removal rates, low roughness and high yield, making it ideal for logic chips, 3D NAND/DRAM and other advanced semiconductor processes.
Parameter
Range
pH
6.00~8.00
Viscosity
≤10 mPa·s
Density
1.02~1.06 g/cm³
Solid
6%~15%
Average Particle Size
60~100 nm
Product Features
Uniform colloidal SiO2 abrasive for homogeneous polishing
Low metal ion content to minimize surface corrosion and contamination
High removal rate with adjustable selectivity and dishing control
Easy to clean with high dilution; leaves minimal residues
Customizable formulas and full technical support
Recommended process
Before use, add the original copper polishing solution to deionized water and hydrogen peroxide. The dilution ratio is approximately: slurryDIW:H2O2 (net content) – 1:10:0.07 or 1:8:0.07. Polishing disc speed: For detailed data, please contact Jizhi Electronic Technology. The CMP process can also be adjusted according to customer requirements, with the average surface roughness Ra being less than 0.2mm. The polishing pad is preferably a coarse polishing pad of polyurethane type from Jizhi Electronics.
