Gize Electronics aims to help users continuously improve efficiency and yield. We are dedicated to the ongoing R&D and refinement of processes for SiC substrate DMP (Double-sided Mechanical Polishing) and CMP (Chemical Mechanical Polishing). Through long-term R&D accumulation, we have broken the long-term foreign monopoly on key consumables, achieving domestic substitution. The following provides a detailed explanation of how to select and match slurries (grinding/polishing), pads (grinding/polishing) for SiC substrate processing, the performance of CMP products, as well as product recommendations and parameter details for SiC grinding/polishing processes.
Brief SiC Substrate Processing Flow: Ingot Mixing → Crystal Growth → Slicing → MP Grinding OR Wheel Grinding → CMP Polishing → Cleaning & Inspection.
SiC Substrate Slurry Selection: High-quality polycrystalline diamond is typically chosen for SiC substrate slurry. It offers high strength, toughness, and self-sharpening properties. In grinding and polishing applications, it enables very high surface quality for SiC wafers while significantly improving the material removal rate (MRR). Gize Electronics can customize slurry products according to requirements, with common particle sizes including: 1.5-1μm, 1μm, 2-4μm, 5μm, etc.
Step 1: SiC Rough Grinding Process Test Data
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Wafer: 6-inch SiC
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Slurry: JZ-8003
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Pad: JZ-2020
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Pressure: 3 psi
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Polishing Rate (MRR): 25-30 μm/H
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Surface Roughness (Ra): 1.22 nm
Step 2: SiC Fine Grinding Process Test Data
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Wafer: 6-inch SiC
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Slurry: JZ-8001
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Pad: JZ-2020
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Pressure: 3 psi
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Polishing Rate (MRR): 6.8 μm/H
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Surface Roughness (Ra): 0.45 nm
Step 3: SiC Rough Polishing (CMP) Process Test Data
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Wafer: 6-inch SiC
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Slurry: JZ-8010
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Pad: JZ-2020
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Pressure: 350 g/cm²
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Polishing Rate (MRR): 2.5 μm/H
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Surface Roughness (Ra): 0.13 nm
Step 4: SiC Fine Polishing (CMP) Process Test Data
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Wafer: 6-inch SiC
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Slurry: JZ-8020
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Pad (Fine Polish): JZ-326
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Pressure: 300 g/cm²
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Polishing Rate (MRR): 0.25 μm/H
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Surface Roughness (Ra): 0.06 nm
Gize Electronics SiC Rough/Finish CMP Slurry Product Usage Instructions:
When Gize Electronics CMP slurries and pads are used for SiC substrate polishing, the surface roughness can achieve 0.06 nm or lower.
