{"id":2113,"date":"2026-05-19T14:10:11","date_gmt":"2026-05-19T06:10:11","guid":{"rendered":"https:\/\/jeez-semicon.com\/?p=2113"},"modified":"2026-05-19T14:16:31","modified_gmt":"2026-05-19T06:16:31","slug":"cmp-in-advanced-nodes-challenges-at-7nm-5nm-beyond","status":"publish","type":"post","link":"https:\/\/jeez-semicon.com\/zh\/blog\/cmp-in-advanced-nodes-challenges-at-7nm-5nm-beyond\/","title":{"rendered":"CMP in Advanced Nodes:Challenges at 7nm, 5nm &#038; Beyond"},"content":{"rendered":"<!-- ============================================================\r\n     JEEZ \u2014 Cluster Article 05\r\n     CMP in Advanced Nodes: Challenges at 7nm, 5nm & Beyond\r\n     Updated: May 2026\r\n     ============================================================ -->\r\n<p><style>\r\n@import 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h4{font-family:var(--font-head);font-size:15px;font-weight:700;color:var(--jeez-navy);margin-bottom:7px}\r\n.jc-callout-body p{font-size:14px;color:var(--jeez-muted);margin:0;line-height:1.65}\r\n.jc-ul{list-style:none;margin:12px 0 18px;padding-left:0}\r\n.jc-ul li{padding:4px 0 4px 24px;position:relative;font-size:15px;line-height:1.65}\r\n.jc-ul li::before{content:'';position:absolute;left:0;top:13px;width:8px;height:8px;border-radius:50%;background:var(--jeez-accent)}\r\n.jc-node-timeline{display:flex;flex-direction:column;gap:0;margin:28px 0;border:1px solid var(--jeez-border);border-radius:var(--radius-md);overflow:hidden}\r\n.jc-node-row{display:grid;grid-template-columns:120px 1fr;border-bottom:1px solid var(--jeez-border)}\r\n.jc-node-row:last-child{border-bottom:none}\r\n.jc-node-label{background:var(--jeez-navy);color:#fff;font-family:var(--font-head);font-size:13px;font-weight:700;padding:16px 14px;display:flex;align-items:center;justify-content:center;text-align:center;line-height:1.3}\r\n.jc-node-content{padding:14px 18px;font-size:13px;color:var(--jeez-text);line-height:1.6}\r\n.jc-node-content strong{display:block;color:var(--jeez-navy);margin-bottom:4px;font-size:13px}\r\n@media(max-width:480px){.jc-node-row{grid-template-columns:1fr}.jc-node-label{text-align:left;justify-content:flex-start}}\r\n.jc-related{background:var(--jeez-light);border:1px solid var(--jeez-border);border-radius:var(--radius-md);padding:24px 28px;margin:40px 0}\r\n.jc-related-title{font-family:var(--font-head);font-size:13px;font-weight:700;color:var(--jeez-navy);text-transform:uppercase;letter-spacing:.08em;margin-bottom:14px}\r\n.jc-related-grid{display:grid;grid-template-columns:repeat(auto-fit,minmax(220px,1fr));gap:10px}\r\n.jc-related-link{display:flex;align-items:center;gap:10px;background:var(--jeez-white);border:1px solid var(--jeez-border);border-radius:var(--radius-sm);padding:11px 14px;text-decoration:none;color:var(--jeez-navy);font-size:13px;font-weight:500;transition:border-color .2s,box-shadow .2s}\r\n.jc-related-link:hover{border-color:var(--jeez-sky);box-shadow:var(--shadow-sm)}\r\n.jc-related-link span.ico{font-size:16px;flex-shrink:0}\r\n.jc-cta{background:linear-gradient(135deg,var(--jeez-accent) 0%,#00a884 100%);border-radius:var(--radius-lg);padding:40px 44px;text-align:center;margin:52px 0 20px}\r\n.jc-cta h3{font-family:var(--font-head);font-size:clamp(18px,2.5vw,23px);font-weight:800;color:var(--jeez-navy);margin:0 0 10px}\r\n.jc-cta p{font-size:14px;color:rgba(10,22,40,.72);margin-bottom:20px}\r\n.jc-cta a{display:inline-block;background:var(--jeez-navy);color:#fff;font-size:14px;font-weight:700;padding:12px 30px;border-radius:30px;text-decoration:none;transition:opacity .2s}\r\n.jc-cta a:hover{opacity:.85}\r\n.jc-tag{display:inline-block;font-size:11px;font-weight:600;letter-spacing:.07em;text-transform:uppercase;background:var(--jeez-light);color:var(--jeez-blue);border:1px solid var(--jeez-border);border-radius:4px;padding:3px 8px;margin-right:5px;margin-bottom:4px}\r\n<\/style><\/p>\r\n<div class=\"jc\">\r\n<div class=\"jc-hero\">\r\n<div class=\"jc-hero-label\">Advanced Technology \u00b7 Updated May 2026<\/div>\r\n<p class=\"jc-hero-intro\">A detailed technical analysis of how CMP requirements evolve at leading-edge logic nodes \u2014 covering new device architectures (GAA, CFET), new interconnect materials (cobalt, ruthenium), ultra-low-k dielectric challenges, tightening metrology requirements, and the role of CMP in 3D NAND and advanced packaging through 2026 and beyond.<\/p>\r\n<div class=\"jc-hero-meta\">\u23f1 13 min read\ud83d\udccb ~2,900 words\ud83c\udfed By JEEZ Technical Team<\/div>\r\n<\/div>\r\n<div class=\"jc-toc\">\r\n<div class=\"jc-toc-title\">\u76ee\u5f55<\/div>\r\n<ol>\r\n<li><a href=\"#why-harder\">Why CMP Gets Harder at Each Node<\/a><\/li>\r\n<li><a href=\"#node-evolution\">Node-by-Node CMP Requirements<\/a><\/li>\r\n<li><a href=\"#gaa-cfet\">GAA &amp; CFET: New CMP Steps<\/a><\/li>\r\n<li><a href=\"#new-metals\">New Metals: Cobalt, Ruthenium &amp; Beyond<\/a><\/li>\r\n<li><a href=\"#low-k\">Ultra-Low-k Dielectric CMP<\/a><\/li>\r\n<li><a href=\"#metrology\">Metrology &amp; Process Control at Scale<\/a><\/li>\r\n<li><a href=\"#3d-nand\">CMP in 3D NAND Flash<\/a><\/li>\r\n<li><a href=\"#packaging\">Advanced Packaging &amp; Hybrid Bonding<\/a><\/li>\r\n<li><a href=\"#outlook\">Technology Outlook to 2030<\/a><\/li>\r\n<\/ol>\r\n<\/div>\r\n<h2 id=\"why-harder\">Why CMP Gets Harder at Each Node<\/h2>\r\n<p>Every technology node transition imposes stricter requirements on CMP across four dimensions simultaneously: tighter thickness targets, new materials with unfamiliar chemistries, more fragile film structures that cannot tolerate conventional polishing forces, and higher step counts that multiply the impact of any single-step imperfection on final yield. Understanding why these demands intensify with scaling is essential for anticipating where CMP process development resources must be focused.<\/p>\r\n<p>This article extends the foundational CMP discussion in the <a class=\"jl\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/cmp-semiconductor-the-complete-guide-to-chemical-mechanical-planarization\/\" target=\"_blank\" rel=\"noopener\">CMP Semiconductor Complete Guide<\/a> into the specific challenges encountered at 7 nm, 5 nm, 3 nm, and sub-3 nm process nodes. For a comparison of CMP process types across different film materials, see <a class=\"jl\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/Copper-CMP-vs-Tungsten-CMP-vs-Oxide-CMP-Full-Comparison\/\" target=\"_blank\" rel=\"noopener\">Copper CMP vs Tungsten CMP vs Oxide CMP<\/a>.<\/p>\r\n<div class=\"jc-highlight\"><strong>The scaling paradox for CMP:<\/strong> As transistors shrink, the total number of CMP steps per wafer <em>increases<\/em> \u2014 because more metal layers, more complex dielectric stacks, and new device architectures require more planarization steps. A 3 nm logic chip in 2026 may require 25+ CMP steps, compared to 12\u201315 for a 28 nm chip a decade earlier.<\/div>\r\n<h2 id=\"node-evolution\">Node-by-Node CMP Requirements<\/h2>\r\n<div class=\"jc-node-timeline\">\r\n<div class=\"jc-node-row\">\r\n<div class=\"jc-node-label\">28nm \/ 14nm<\/div>\r\n<div class=\"jc-node-content\"><strong>Baseline FinFET era<\/strong>Introduction of FinFET transistors required new STI CMP modules with tighter fin height uniformity control. Copper interconnects using conventional dual-damascene CMP. WIWNU target: &lt;3%. 12\u201316 CMP steps total.<\/div>\r\n<\/div>\r\n<div class=\"jc-node-row\">\r\n<div class=\"jc-node-label\">10nm \/ 7nm<\/div>\r\n<div class=\"jc-node-content\"><strong>Cobalt local interconnect introduction<\/strong>Tungsten replaced by cobalt for M0\/V0 local interconnects to reduce contact resistance. New Co CMP chemistry required. Extreme UV (EUV) lithography integration requires sub-1 nm surface non-uniformity. Low-k dielectric (k \u2248 2.5) CMP becomes critical. 18\u201322 CMP steps total.<\/div>\r\n<\/div>\r\n<div class=\"jc-node-row\">\r\n<div class=\"jc-node-label\">5nm \/ 3nm<\/div>\r\n<div class=\"jc-node-content\"><strong>GAA nanosheet transition<\/strong>Gate-All-Around (nanosheet) transistors replace FinFET. New SiGe-to-Si selective CMP steps required for nanosheet release. Ruthenium interconnects at local level. ULK dielectrics (k &lt; 2.2). WIWNU target: &lt;0.5 nm across 300 mm. 22\u201326 CMP steps total.<\/div>\r\n<\/div>\r\n<div class=\"jc-node-row\">\r\n<div class=\"jc-node-label\">2nm &amp; below<\/div>\r\n<div class=\"jc-node-content\"><strong>CFET and backside power delivery<\/strong>Complementary FET (CFET) stacks nFET directly on top of pFET \u2014 requiring atomic-precision CMP for interlayer planarization. Backside power delivery networks (BSPDN) add new backside CMP modules. Hybrid bonding integration. WIWNU target: &lt;0.3 nm. 28+ CMP steps projected.<\/div>\r\n<\/div>\r\n<\/div>\r\n<h2 id=\"gaa-cfet\">GAA &amp; CFET: New CMP Steps<\/h2>\r\n<p>The transition from FinFET to Gate-All-Around (GAA) nanosheet transistors \u2014 commercialised by Samsung at 3 nm in 2022 and by TSMC and Intel at 2 nm in 2025 \u2014 introduces entirely new CMP process modules that have no precedent in previous-generation manufacturing.<\/p>\r\n<h3>SiGe Selective CMP for Nanosheet Release<\/h3>\r\n<p>GAA nanosheets are formed by depositing alternating layers of silicon (Si) and silicon germanium (SiGe) \u2014 typically 4\u20136 bilayers \u2014 and then selectively removing the SiGe layers to release the silicon nanosheets that form the transistor channels. One approach to nanosheet formation involves a CMP step to planarize the epitaxial stack before the SiGe etch, requiring a slurry with extremely high SiGe-to-Si selectivity (ideally &gt;20:1) to stop reliably on the top silicon layer without over-polishing into it.<\/p>\r\n<p>This selectivity requirement drives the development of novel ceria-based slurries with surface-passivating additives that preferentially protect Si while aggressively removing SiGe. The thickness of each silicon nanosheet \u2014 as little as 5 nm \u2014 means that even a few angstroms of over-polish can degrade transistor performance and uniformity.<\/p>\r\n<h3>Gate Dielectric Planarization<\/h3>\r\n<p>After high-k gate dielectric deposition and gate metal fill, a CMP step planarizes the gate stack to expose the source\/drain contact regions. At GAA geometries, the lateral spacing between adjacent nanosheets is 5\u20138 nm \u2014 making this one of the most topology-challenging CMP applications in the entire process flow. Within-die removal uniformity at this step directly determines transistor threshold voltage uniformity across the chip.<\/p>\r\n<h3>CFET Interlayer CMP<\/h3>\r\n<p>Complementary FET (CFET) architecture stacks an nFET transistor directly on top of a pFET by separating them with an ultra-thin dielectric isolation layer. The interlayer CMP that planarizes this isolation dielectric must achieve height uniformity within 1\u20132 \u00c5 across the die to ensure that the upper nFET nanosheet stack is fabricated on a surface indistinguishable from a pristine substrate. This represents perhaps the most stringent CMP specification in the history of semiconductor manufacturing.<\/p>\r\n<h2 id=\"new-metals\">New Metals: Cobalt, Ruthenium &amp; Beyond<\/h2>\r\n<p>The use of tungsten as the universal fill metal for contacts and local vias \u2014 a paradigm established in the 1990s \u2014 is being systematically displaced at advanced nodes by lower-resistance metals as line widths shrink below 20 nm and wire resistance becomes the dominant circuit performance bottleneck.<\/p>\r\n<h3>\u94b4 CMP<\/h3>\r\n<p>Cobalt was introduced for M0\/V0 local interconnects at 10 nm and 7 nm nodes by Intel and TSMC. Unlike tungsten, cobalt has a significantly lower bulk resistivity (6.2 \u00b5\u03a9\u00b7cm vs 5.6 \u00b5\u03a9\u00b7cm for W, but with far lower barrier layer overhead at narrow widths), enabling lower contact resistance. However, cobalt CMP presents unique challenges that tungsten CMP does not:<\/p>\r\n<ul class=\"jc-ul\">\r\n<li>Cobalt is thermodynamically unstable in both acidic and strongly alkaline solutions \u2014 corroding readily \u2014 which severely constrains the accessible chemistry window for slurry design.<\/li>\r\n<li>Cobalt is prone to galvanic corrosion when in contact with copper or tungsten in the same CMP slurry environment.<\/li>\r\n<li>Cobalt ions (Co\u00b2\u207a) in solution are cytotoxic and subject to strict environmental discharge limits \u2014 requiring dedicated wastewater treatment for cobalt CMP effluent.<\/li>\r\n<li>The optimal slurry pH for cobalt stability is approximately 8\u20139 \u2014 a narrow window that must be maintained within \u00b10.2 units throughout the slurry&#8217;s lifecycle.<\/li>\r\n<\/ul>\r\n<h3>Ruthenium CMP<\/h3>\r\n<p>Ruthenium is emerging as the preferred metal for both local interconnects (M0, M1) and metal gate fill at 2 nm and below. Its very low resistivity (7.1 \u00b5\u03a9\u00b7cm bulk, with superior scaling behavior at sub-5 nm line widths due to lower grain boundary and surface scattering) and good electromigration resistance make it attractive for the most critical wiring levels. Ruthenium CMP is even more challenging than cobalt: Ru is extremely hard and chemically inert in most acidic and alkaline solutions, requiring aggressive oxidisers (e.g., periodate, hypochlorite) to achieve practical removal rates. Slurry formulation for Ru CMP is an active area of research and development in 2026.<\/p>\r\n<h2 id=\"low-k\">Ultra-Low-k Dielectric CMP<\/h2>\r\n<p>The progressive reduction of inter-metal dielectric (IMD) permittivity from SiO\u2082 (k = 3.9) through fluorinated silica glass (k = 3.5), to organosilicate glass (k \u2248 2.7), porous OSG (k \u2248 2.4), and now ultra-low-k porous dielectrics (k &lt; 2.2) has been driven by the need to reduce RC delay in back-end interconnects. Each step down in dielectric constant is achieved by introducing porosity into the film \u2014 and each step down in k reduces the film&#8217;s mechanical strength and fracture toughness, making CMP progressively more challenging.<\/p>\r\n<h3>Delamination Risk<\/h3>\r\n<p>Porous ultra-low-k films with k values below 2.2 have elastic moduli below 5 GPa \u2014 compared to 70 GPa for SiO\u2082 \u2014 and critical adhesion energies (Gc) as low as 1 J\/m\u00b2. The shear stress applied during CMP polishing can exceed this adhesion energy at conventional polishing conditions, causing catastrophic film delamination at the dielectric-barrier interface. Preventing delamination requires reducing downforce, using softer pads with lower shear stress, and reformulating slurries with lower abrasive loading and improved surfactant packages that reduce the coefficient of friction at the polishing interface.<\/p>\r\n<h3>Moisture Absorption<\/h3>\r\n<p>Porous low-k films are highly susceptible to moisture absorption from aqueous CMP slurries. Water molecules that penetrate the pore network increase the effective dielectric constant of the film \u2014 partially negating the benefit of low-k \u2014 and can cause delayed delamination through hydrolysis of Si\u2013C bonds at the film surface. Post-CMP low-k films therefore require a dedicated UV or thermal &#8220;cure&#8221; step to restore the dielectric properties and expel absorbed moisture before the next deposition step.<\/p>\r\n<h2 id=\"metrology\">Metrology &amp; Process Control at Scale<\/h2>\r\n<p>The tightening uniformity requirements at advanced nodes demand a corresponding evolution in in-situ and ex-situ metrology capability. The 1 nm WIWNU targets achievable at 7 nm must shrink to 0.3\u20130.5 nm at 3 nm and below \u2014 a standard that challenges the resolution limit of many commercially deployed metrology tools.<\/p>\r\n<div class=\"jc-card-grid\">\r\n<div class=\"jc-card\">\r\n<div class=\"jc-card-icon\">\ud83d\udce1<\/div>\r\n<h4>Broadband Reflectometry<\/h4>\r\n<p>Multi-wavelength optical endpoint detection provides real-time thickness mapping at multiple radial positions, enabling closed-loop pressure zone adjustment during polish.<\/p>\r\n<\/div>\r\n<div class=\"jc-card\">\r\n<div class=\"jc-card-icon\">\ud83d\udd2c<\/div>\r\n<h4>Scatterometry (OCD)<\/h4>\r\n<p>Optical critical dimension scatterometry measures post-CMP surface topography with sub-nanometre sensitivity \u2014 increasingly used for advanced-node process qualification.<\/p>\r\n<\/div>\r\n<div class=\"jc-card\">\r\n<div class=\"jc-card-icon\">\u26a1<\/div>\r\n<h4>Eddy Current Metrology<\/h4>\r\n<p>Non-contact eddy current sensors measure metal film thickness in situ without requiring a pad window \u2014 used for copper and cobalt CMP endpoint and uniformity control.<\/p>\r\n<\/div>\r\n<div class=\"jc-card\">\r\n<div class=\"jc-card-icon\">\ud83e\udd16<\/div>\r\n<h4>Machine Learning APC<\/h4>\r\n<p>Advanced process control (APC) systems using machine learning models predict and correct for run-to-run thickness variation using feed-forward data from upstream deposition tools.<\/p>\r\n<\/div>\r\n<\/div>\r\n<h2 id=\"3d-nand\">CMP in 3D NAND Flash<\/h2>\r\n<p>Three-dimensional NAND flash memory \u2014 the dominant storage technology in smartphones, SSDs, and data centres \u2014 relies on CMP throughout its fabrication but with a set of challenges distinctly different from logic CMP. In 2026, leading 3D NAND manufacturers including Samsung, SK Hynix, Micron, and Kioxia have reached 300+ layer stack heights, and the demands this places on CMP are extraordinary.<\/p>\r\n<p>The core challenge is the sheer thickness of the oxide-nitride (ON) multilayer stack: at 300 layers, the total stack height exceeds 10 \u00b5m. CMP is used to planarize this stack after deposition and before staircase formation and channel hole etching. Polishing a 10 \u00b5m oxide film to nanometre-level uniformity across a 300 mm wafer requires slurries and pads optimised for high removal rate stability over very long polish times, and endpoint systems capable of detecting the transition from oxide to the underlying layer at the base of the stack.<\/p>\r\n<h2 id=\"packaging\">Advanced Packaging &amp; Hybrid Bonding<\/h2>\r\n<p>Perhaps the most transformative application of CMP in 2026 is its role in advanced packaging \u2014 specifically <strong>hybrid bonding<\/strong>, the technique that enables chiplets to be stacked face-to-face with sub-micron-pitch direct copper-to-copper interconnects. This application demands CMP performance that exceeds even the most demanding front-end logic requirements.<\/p>\r\n<p>In hybrid bonding, copper bond pads and the surrounding dielectric (typically SiCN or SiO\u2082) must be co-planar within 1\u20132 nm, and the surface roughness must be below 0.3 nm Ra. Any step height between the copper pads and the dielectric \u2014 whether positive (proud copper) or negative (recessed copper) \u2014 creates a void at the bonding interface that reduces bond strength and electrical conductivity. Achieving this specification requires:<\/p>\r\n<ul class=\"jc-ul\">\r\n<li>Ultra-gentle CMP with downforce below 1 psi to avoid copper dishing<\/li>\r\n<li>Slurries specifically formulated for near-zero copper dishing \u2014 with carefully balanced corrosion inhibitor concentration<\/li>\r\n<li>Soft polishing pads that conform to local topography without introducing global non-uniformity<\/li>\r\n<li>Advanced in-situ metrology to detect sub-nanometre copper recess in real time<\/li>\r\n<li>A dedicated post-CMP cleaning step producing surface metal contamination below instrument detection limits<\/li>\r\n<\/ul>\r\n<p>For the full discussion of CMP in 3D IC and heterogeneous integration, see our dedicated article: <a class=\"jl\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/CMP-in-3D-IC-Heterogeneous-Integration-New-Frontiers\/\" target=\"_blank\" rel=\"noopener\">CMP in 3D IC &amp; Heterogeneous Integration: New Frontiers<\/a>.<\/p>\r\n<h2 id=\"outlook\">Technology Outlook to 2030<\/h2>\r\n<p>Looking ahead from May 2026, the CMP technology roadmap through 2030 is shaped by four converging trends: continued transistor scaling toward 1.4 nm and angstrom-class nodes; proliferation of 3D integration and chiplet architectures; introduction of novel channel and interconnect materials (2D materials, topological metals); and the growing importance of compound semiconductor (SiC, GaN) CMP for power and RF applications.<\/p>\r\n<div class=\"jc-callout\">\r\n<div class=\"jc-callout-icon\">\ud83d\udd2d<\/div>\r\n<div class=\"jc-callout-body\">\r\n<h4>Key CMP trends to watch through 2030<\/h4>\r\n<p><strong>Atomic-layer CMP (ALCMP):<\/strong> Combining atomic-layer deposition (ALD) with CMP in a self-limiting planarization cycle for atomic-precision material removal.<br \/><br \/><strong>2D material CMP:<\/strong> MoS\u2082, WSe\u2082, and other transition metal dichalcogenides (TMDs) as channel materials require CMP stop layers with atomic-monolayer precision.<br \/><br \/><strong>AI-driven slurry development:<\/strong> Machine learning models trained on large CMP process datasets are accelerating slurry and pad formulation development cycles from years to months.<br \/><br \/><strong>SiC and GaN CMP growth:<\/strong> The power electronics boom is driving rapid growth in SiC and GaN wafer CMP \u2014 a segment where conventional semiconductor slurry and pad suppliers are actively expanding capabilities.<\/p>\r\n<\/div>\r\n<\/div>\r\n<div class=\"jc-related\">\r\n<div class=\"jc-related-title\">Related Articles in This Series<\/div>\r\n<div class=\"jc-related-grid\"><a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/cmp-semiconductor-the-complete-guide-to-chemical-mechanical-planarization\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\ud83d\udcd6<\/span>CMP Complete Guide (Pillar)<\/a> <a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/CMP-in-3D-IC-Heterogeneous-Integration-New-Frontiers\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\ud83e\udde9<\/span>CMP in 3D IC &amp; Packaging<\/a> <a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/Copper-CMP-vs-Tungsten-CMP-vs-Oxide-CMP-Full-Comparison\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\u2696\ufe0f<\/span>Cu vs W vs Oxide CMP<\/a> <a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/CMP-Defect-Types-Root-Causes-Yield-Improvement\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\ud83d\udd0d<\/span>CMP Defects &amp; Yield<\/a> <a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/CMP-Slurry-Guide-Types-Selection-Optimization\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\ud83e\uddea<\/span>CMP Slurry Guide<\/a> <a class=\"jc-related-link\" href=\"https:\/\/jeez-semicon.com\/zh\/blog\/Post-CMP-Cleaning-Methods-Challenges-Best-Practices\/\" target=\"_blank\" rel=\"noopener\"><span class=\"ico\">\ud83e\udee7<\/span>Post-CMP Cleaning<\/a><\/div>\r\n<\/div>\r\n<div class=\"jc-cta\">\r\n<h3>CMP Consumables for Advanced-Node Applications<\/h3>\r\n<p>JEEZ supplies CMP slurries and polishing pads qualified for leading-edge applications. Our technical team supports process engineers at every node transition.<\/p>\r\n<a href=\"https:\/\/jeez-semicon.com\/zh\/contact\/\" target=\"_blank\" rel=\"noopener\">Contact JEEZ \u2192<\/a><\/div>\r\n<div style=\"margin-top: 28px;\"><span class=\"jc-tag\">Advanced Nodes<\/span> <span class=\"jc-tag\">7nm CMP<\/span> <span class=\"jc-tag\">GAA Transistor<\/span> <span class=\"jc-tag\">\u94b4 CMP<\/span> <span class=\"jc-tag\">Ruthenium CMP<\/span> <span class=\"jc-tag\">Low-k Dielectric<\/span> <span class=\"jc-tag\">Hybrid Bonding<\/span><\/div>\r\n<\/div>","protected":false},"excerpt":{"rendered":"<p>Advanced Technology \u00b7 Updated May 2026 A detailed technical analysis of how CMP requirements evolve at leading-edge logic nodes \u2014 covering new device architectures (GAA, CFET), new interconnect materials (cobalt,  &#8230;<\/p>","protected":false},"author":1,"featured_media":2115,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[9,59],"tags":[],"class_list":["post-2113","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-blog","category-industry"],"acf":[],"_links":{"self":[{"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/posts\/2113","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/comments?post=2113"}],"version-history":[{"count":3,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/posts\/2113\/revisions"}],"predecessor-version":[{"id":2137,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/posts\/2113\/revisions\/2137"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/media\/2115"}],"wp:attachment":[{"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/media?parent=2113"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/categories?post=2113"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/jeez-semicon.com\/zh\/wp-json\/wp\/v2\/tags?post=2113"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}