Semiconductor Polishing Slurry Sapphire Polishing Slurry / Grinding Slurry
Sapphire Polishing Slurry / Sapphire A-Plane Polishing Slurry / Sapphire C-Plane Polishing Slurry
SiO2/Al2O3/CeO2/ZrO2
主な特徴
- High-purity raw materials with no contamination
- Fast polishing rate with high planarization
- High removal rate, good stability, low damage layer, and excellent surface quality
製品名
Sapphire Polishing Slurry / Sapphire A-Plane Polishing Slurry / Sapphire C-Plane Polishing Slurry
Product Description
The Sapphire Grinding Slurry / Sapphire LED Substrate Polishing Slurry / Sapphire Slurry formulation developed for the semiconductor and optical industries is suitable for the planarization of sapphire substrates, epitaxial wafers, and LEDs. Designed to meet the requirements of every substrate manufacturing stage from grinding to CMP, it provides a high-performance, cost-effective solution for sapphire substrate polishing applications.
製品の特徴
High-purity raw materials with no contamination
Fast polishing rate with high planarization
High removal rate, good stability, low damage layer, and excellent surface quality


Features of JIZHI Electronics CMP Sapphire Grinding Slurry / Polishing Slurry
1.High-performance slurry for the mass production of sapphire wafers.
2.The formulation is designed to meet the requirements of every process stage in substrate manufacturing, from grinding to CMP, and is suitable for oriented sapphire wafers, including C-plane, A-plane, and R-plane polishing.
3.It achieves a high removal rate with no subsurface damage, while providing excellent stability and reusability.
4.The JIZHI Electronics sapphire slurry product portfolio provides a high-performance and cost-effective solution.
5.Customized one-to-one solutions can be provided according to specific grinding and polishing requirements.
C-Plane Sapphire Substrate Polishing Process and Supporting Materials
| Process | Category | Particle Size (μm) | pH | モデル | Matching Plate / Pad | Rate (μm/min) |
|---|---|---|---|---|---|---|
| Grinding | Polycrystalline Diamond-Like Slurry | 5-6 | 4-6 | JZ-CD06 | Copper Plate | 3.3 |
| Polycrystalline Diamond-Like Slurry | 3-4 | 4-6 | JZ-CD04 | Copper Plate | 2.6 | |
| Polycrystalline Diamond-Like Slurry | 1-2 | 4-6 | JZ-CD02 | Copper Plate | 2 | |
| 研磨 | Alumina Polishing Slurry | 0.5-1.5 | 12-14 | JZ-A02 | Nonwoven Fiber Pad | 0.13 |
| Alumina Polishing Slurry | 0.5-1.5 | 3-5 | JZ-A03 | Nonwoven Fiber Pad | 0.08 |
Technical Specifications of Diamond Grinding Slurry

| Specification | Coarse Grinding Diamond Slurry | ||
|---|---|---|---|
| Product Type | Polycrystalline Diamond-Like Slurry | ||
| モデル | JZ-CD06 | JZ-CD04 | JZ-CD02 |
| Matching Plate / Pad | Copper Plate | Copper Plate | Copper Plate |
| pH Value | 4-6 | 4-6 | 4-6 |
| 粒子径(D50) | 5–6 μm | 3–4 μm | 1–2 μm |
| 除去率 | 3.3 μm/min | 2.6 μm/min | 2.0 μm/min |
| 表面品質 | Fine grinding texture | ||
製品の特徴
Fast removal rate / Easy to clean after polishing / Stable particle size with fine texture
Technical Specifications and Product Introduction of Alumina Polishing Slurry

| Specification | Alumina Polishing Slurry | |
|---|---|---|
| Applicable Wafer | C-plane Sapphire Substrate | |
| Product Model | JZ-A02 | JZ-A03 |
| Matching Polishing Pad | Non-woven Pad Z-800T | |
| Solid Content | 20 | 20 |
| pH Value | 12-14 | 3-5 |
| 粒子径(D50) | 0.5-1.5 μm | 0.5-1.5 μm |
| 除去率 | 0.13μm | 0.08μm |
| Dilution Ratio | 5–10× | 5–10× |
製品の特徴
High dilution ratio, reducing costs
Alkaline formulation with fast removal rate, good suspension performance, and easy redispersion
Long service life, stable particle size, and no scratching
Technical Specifications and Product Introduction of Polishing Pad
Suitable for rough polishing of sapphire and silicon carbide substrates
Resistant to strong acids, alkalis, and corrosion, with a long service life Moderate hardness, maintaining good removal rate while reducing the risk of scratching Made from a special polymer polyurethane and non-woven composite structure, compatible with alumina-based rough polishing slurries for over 48 hours
| モデル | 厚さ(mm) | Shore A Hardness | Density (g/cm³) | Compression Ratio (%) |
|---|---|---|---|---|
| JZ-800T | 1.5MM | 90 | 0.44 | 2.1 |
Backing adhesive and grooving services can be provided according to different requirements.
Standard grid groove sizes: 5×5 mm, 10×10 mm, 15×15 mm, 20×20 mm, 25×25 mm, 30×30 mm, etc.
Standard diameters: 380 mm, Φ610 mm, Φ640 mm, Φ855 mm, Φ910 mm, Φ930 mm, Φ1120 mm, Φ1180 mm, Φ1300 mm, etc.; custom sizes available.
AFM Surface Roughness Measurement
Sapphire Polishing Slurry JZ-A02

Data Performance After Candela Inspection
Data Performance After Candela Inspection

JIZHIエレクトロニクスSiC炭化ケイ素研磨スラリーの保管方法
換気の良い、涼しく乾燥した倉庫で保管すること。製品は直射日光と凍結を避け、5~35℃で保管すること。0 °C以下で保管すると、不可逆的な凝集が起こり、製品が使用できなくなることがある。.
JIZHIエレクトロニクスCMP/スラリー研磨液の価格
JIZHIエレクトロニクスのCMP用金属研磨スラリーは、海外の高度な生産技術と設備により製造され、特殊な化学組成で調合されています。輸入品と比較しても遜色のない品質です。.
現地生産により、JIZHIエレクトロニクスのCMPスラリーは、短納期、安定した高品質、競争力のある費用対効果の高い価格設定を実現しています。.
Jizhi Electronicsを選ぶ理由
光学材料CMPにおける10年の経験
光学材料CMPにおける10年の経験
研磨液と処方は柔軟にカスタマイズ可能
国際規格に適合した無害で生分解性の処方
フリー・プロセス・デバッグ
40%従来品より処理時間を短縮
海外生産技術・設備の導入
最適化された消費率により、全体的な稼働率を低減