LN/LT Slurry

Lithium Tantalate / Lithium Niobate Polishing Slurry, Lithium Tantalate / Lithium Niobate Wafer Polishing Slurry, Lithium Tantalate / Lithium Niobate Grinding and Polishing Slurry, LTLN Polishing Slurry

SiO2/Al2O3/CeO2/ZrO2

見積依頼

主な特徴

High-purity raw materials with no contamination
Fast polishing rate with high planarization
High removal rate, good stability, low damage layer, and excellent surface quality

製品名

Lithium Tantalate / Lithium Niobate Polishing Slurry, Lithium Tantalate / Lithium Niobate Wafer Polishing Slurry, Lithium Tantalate / Lithium Niobate Grinding and Polishing Slurry, LTLN Polishing Slurry

Product Description

A chemical mechanical polishing slurry / slurry formulation developed for the semiconductor industry and for lithium tantalate / lithium niobate crystal wafer processing, suitable for high-efficiency planarization in precision and ultra-precision applications of LiTaO₃ / LiNbO₃. It is designed to improve the material removal rate of lithium tantalate (LiTaO₃) and lithium niobate (LiNbO₃) wafers, reduce surface roughness, and achieve an ultra-smooth surface.

製品の特徴

A “two-component” polishing slurry suitable for lithium tantalate (LT) and lithium niobate (LN) substrates.
The polishing slurry JZ-4904 demonstrates excellent performance under high-pressure and high-speed CMP conditions, with the following features:

Achieves higher removal rates and better planarization in a shorter time.
Suitable not only for composite substrates but also for single substrates.
Excellent particle removal, resulting in extremely low particle count after CMP, eliminating the need for additional RCA cleaning.

Features of JIZHI Electronics Lithium Niobate (LiNbO₃) Polishing Slurry

High-performance CMP polishing slurry for large-scale manufacturing of LiNbO₃ wafers.
Synthesized through a special process, with spherical, monodispersed nanoparticles of uniform size and narrow particle size distribution, enabling high-quality polishing precision.
Achieves high removal rates with no subsurface damage and provides excellent stability.
pH, particle size, and stable ion content can be customized according to requirements.
Compatible with various polishing pads for polishing applications.

Basic Properties of JZ-4904

Product		JZ-4904
モデル		JZ-4904A Solution	JZ-4904B Solution
Appearance		Liquid – White	Transparent
密度		1.28g/cm³	1.01g/cm³
Slurry Particle Size		50nm	/
pH Value		10	1.1
USE	Mixing Ratio	DI Water : Solution B : Solution A = 10 : 1.5 : 3.5
USE	Color	Light Yellow

JZ-4904 Polishing Experiment – Processing Conditions 1

Polishing Machine	Tokyo Seimitsu CMP Equipment: Champ
Product	4-inch LT Wafer
研磨パッド	1C1400
圧力	2 psi (low pressure)
Platen Speed	60 rpm
Polishing Time	5 min
Flow Rate	150 mL/min (one-way)
除去率	0.42 μm/min
表面粗さ	< 0.3 nm