Indium Phosphide (InP) Polishing Slurry

Indium Phosphide (InP) polishing slurry / CMP slurry formulation tailored for the semiconductor and optical industries

Indium Phosphide (InP) Wafer Polishing Slurry / InP Polishing Slurry

見積依頼

主な特徴

High-purity raw materials with no contamination
Fast polishing rate with high planarization
High removal rate, good stability, low damage layer, and excellent surface quality

製品名

Indium Phosphide (InP) polishing slurry / CMP slurry formulation tailored for the semiconductor and optical industries

Product Description

Indium Phosphide (InP) polishing slurry / CMP slurry formulation tailored for the semiconductor and optical industries, suitable for planarization processing of InP wafers. Designed to meet the requirements of all process stages from grinding to CMP in substrate manufacturing, it provides a high-performance and cost-effective solution for InP wafer polishing applications.

製品の特徴

High-purity raw materials with no contamination
Fast polishing rate with high planarization
High removal rate, good stability, low damage layer, and excellent surface quality

Features of JIZHI Electronics CMP Indium Phosphide (InP) Grinding/Polishing Slurry

1.The formulation is designed to meet the requirements of all process stages from grinding to CMP in substrate manufacturing, enabling rapid thinning and polishing of InP wafers.
2.Achieves high removal rates on InP surfaces with no subsurface damage, while providing excellent stability and reusability.
3.JIZHI Electronics sapphire slurry combinations offer high performance and cost-effective solutions.
4.Customized 1-to-1 solutions can be provided according to specific grinding and polishing requirements.

Material Properties and Application Value of InP

Core Material Properties

Indium phosphide, as an important semiconductor material, features high electron mobility and a wide bandgap, making it a key foundational material for optoelectronic and high-frequency devices.

Main Application Fields

It is widely used in optoelectronics and communication fields, with irreplaceable applications in optical communication devices, infrared detectors, and high-frequency transistors.

Importance of Polishing Process

The polishing process directly affects the surface quality and performance of indium phosphide materials, making it a critical step in improving application reliability and device performance.

Indium Phosphide (InP) Polishing Process Parameters

InP CMP Polishing Process Parameters

InP CMP Polishing Process Parameters
Wafer Size (inch)	2
Wafer Area (cm²)	20.3
Polishing Pressure (g/cm²)	115
Upper Platen Speed (r/min)	80
Lower Platen Speed (r/min)(Platen Diameter φ300 mm)	110
Slurry Flow Rate (ml/min)	30
InP Wafer Post-Polishing Cleaning Process	Immediately rinse the wafer with deionized water after unloading to keep the surface wet. Rinse the wafer surface and polishing carrier evenly with deionized water for 1 minute. After rinsing, dry the wafer using high-purity nitrogen or a spin dryer.

Experimental Data Comparison

Experimental Data	Finished Standard Wafer	Japanese F Competitor Slurry	JIZHI Self-Developed Slurry (F-System Equivalent)
Slurry pH Value	/	3.2	2.9
Removal Rate (μm/min)	/	0.21	0.33
Surface Roughness (nm)	<0.2	0.2	0.19
Usage Method	Purchased standard wafer (sample)	1 g powder + 500 g water + 180 g polishing slurry	1 g powder + 500 g water + 125 g polishing slurry