Silicon Carbide Substrate Grinding Slurry

Категория продукта

JIZHI Electronics – Silicon Carbide Grinding / Semiconductor Wafer Polishing

Характеристики товара

JIZHI Electronics provides two-stage polishing process solutions for silicon carbide (SiC), combining different models of grinding slurries and polishing pads (rough grinding pad / fine grinding pad / rough polishing pad / fine polishing pad). This approach improves the surface quality of SiC substrates during grinding while significantly increasing the material removal rate.

Process and Applications

Suitable for DMP and CMP processes of SiC substrates, effectively improving efficiency and yield. SiC grinding slurries and polishing pads enable domestic substitution for imported products.

Brief Overview of the Silicon Carbide Substrate Processing Flow

Silicon Carbide (SiC) Grinding Process – Rough Grinding / Fine Grinding

Step1
JIZHI Electronics Silicon Carbide (SiC) Rough Grinding Process

SiC Double-Sided Rough Grinding Process
Verification Equipment	double-sided36B
Wafer	6″SiC
Полировочный шлам	JZ-8003
Полировальный диск	JZ-1020
Pressure	3 psi
Upper Platen Rotation Speed	25 rpm
Lower Platen Rotation Speed	10 rpm
Slurry Flow Rate	5L /min
Polishing Rate	25-30um/H
Surface Roughness	1.22nm
TTV (Total Thickness Variation)	<2
Warp	<30
Bow	<10

Rough Grinding · Used with Lapping Pad
Lapping Pad Dimensions and Specifications
Model	JZ-1020
Толщина	1.4 mm
Groove Pattern	Настраиваемый
Твердость	Shore A 85°
Степень сжатия	2.92

Step2
JIZHI Electronics Silicon Carbide (SiC) Fine Grinding Process

SiC Double-Sided Rough Grinding Process
Verification Equipment	double-sided36B
Wafer	6″SiC
Полировочный шлам	JZ-8001
Полировальный диск	JZ-1020
Pressure	3 psi
Upper Platen Rotation Speed	25 rpm
Lower Platen Rotation Speed	10 rpm
Slurry Flow Rate	5L /min
Polishing Rate	6.8um/H
Surface Roughness	0.45nm
TTV (Total Thickness Variation)	<2
Warp	<30
Bow	<20

ine Grinding · Used with Lapping Pad
Lapping Pad Dimensions and Specifications
Model	JZ-1020
Толщина	1.4 mm
Groove Pattern	Настраиваемый
Твердость	Shore A 85°
Степень сжатия	2.92

JIZHI Electronics’ CMP rough and fine grinding process for SiC substrates

Tip 1 – Using rough grinding slurry with a lapping pad, Ra can reach 1.22 nm or lower.
Tip 2 – Using fine grinding slurry with a lapping pad, Ra can reach 0.45 nm or lower.

Recommended Products and Parameters for Silicon Carbide Grinding / Polishing Processes

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry

Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5–35 °C, protected from direct sunlight and from freezing. If stored below 0 °C, irreversible agglomeration may occur, rendering the product unusable.

Pricing of JIZHI Electronics CMP / Slurry Polishing Liquids

JIZHI Electronics’ CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics’ polishing slurries is comparable to that of similar imported products.

Thanks to localized production, JIZHI Electronics’ CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.