LN/LT Slurry
Lithium Tantalate / Lithium Niobate Polishing Slurry, Lithium Tantalate / Lithium Niobate Wafer Polishing Slurry, Lithium Tantalate / Lithium Niobate Grinding and Polishing Slurry, LTLN Polishing Slurry
SiO2/Al2O3/CeO2/ZrO2
Key Features
- High-purity raw materials with no contamination
- Fast polishing rate with high planarization
- High removal rate, good stability, low damage layer, and excellent surface quality
Product Name
Lithium Tantalate / Lithium Niobate Polishing Slurry, Lithium Tantalate / Lithium Niobate Wafer Polishing Slurry, Lithium Tantalate / Lithium Niobate Grinding and Polishing Slurry, LTLN Polishing Slurry
Product Description
A chemical mechanical polishing slurry / slurry formulation developed for the semiconductor industry and for lithium tantalate / lithium niobate crystal wafer processing, suitable for high-efficiency planarization in precision and ultra-precision applications of LiTaO₃ / LiNbO₃. It is designed to improve the material removal rate of lithium tantalate (LiTaO₃) and lithium niobate (LiNbO₃) wafers, reduce surface roughness, and achieve an ultra-smooth surface.
Product Features
A “two-component” polishing slurry suitable for lithium tantalate (LT) and lithium niobate (LN) substrates.
The polishing slurry JZ-4904 demonstrates excellent performance under high-pressure and high-speed CMP conditions, with the following features:
Achieves higher removal rates and better planarization in a shorter time.
Suitable not only for composite substrates but also for single substrates.
Excellent particle removal, resulting in extremely low particle count after CMP, eliminating the need for additional RCA cleaning.


Features of JIZHI Electronics Lithium Niobate (LiNbO₃) Polishing Slurry
- High-performance CMP polishing slurry for large-scale manufacturing of LiNbO₃ wafers.
- Synthesized through a special process, with spherical, monodispersed nanoparticles of uniform size and narrow particle size distribution, enabling high-quality polishing precision.
- Achieves high removal rates with no subsurface damage and provides excellent stability.
- pH, particle size, and stable ion content can be customized according to requirements.
- Compatible with various polishing pads for polishing applications.
Basic Properties of JZ-4904
| Product | JZ-4904 | ||
|---|---|---|---|
| Model | JZ-4904A Solution | JZ-4904B Solution | |
| Appearance | Liquid – White | Transparent | |
| Density | 1.28g/cm³ | 1.01g/cm³ | |
| Slurry Particle Size | 50nm | / | |
| pH Value | 10 | 1.1 | |
| USE | Mixing Ratio | DI Water : Solution B : Solution A = 10 : 1.5 : 3.5 | |
| Color | Light Yellow | ||
JZ-4904 Polishing Experiment – Processing Conditions 1
| Polishing Machine | Tokyo Seimitsu CMP Equipment: Champ |
|---|---|
| Product | 4-inch LT Wafer |
| Polishing Pad | 1C1400 |
| Pressure | 2 psi (low pressure) |
| Platen Speed | 60 rpm |
| Polishing Time | 5 min |
| Flow Rate | 150 mL/min (one-way) |
| Removal Rate | 0.42 μm/min |
| Surface Roughness | < 0.3 nm |

Preparation of JZ~4904 Polishing Liquid

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry
Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5–35 °C, protected from direct sunlight and from freezing. If stored below 0 °C, irreversible agglomeration may occur, rendering the product unusable.
Pricing of JIZHI Electronics CMP / Slurry Polishing Liquids
JIZHI Electronics’ CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics’ polishing slurries is comparable to that of similar imported products.
Thanks to localized production, JIZHI Electronics’ CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.
Why choose Jizhi Electronics?
10 years of experience in optical material CMP
10 years of experience in optical material CMP
Polishing solutions and formulas are flexibly customized
Non-toxic, biodegradable formula meeting internati
Free process debugging
40% faster processing time compared to conventiona
Introduce foreign production technologies and equipment
Optimized consumption rate reduces overall operati