Silicon Carbide Substrate Polishing

JIZHI Electronics · Silicon Carbide Polishing · Semiconductor Wafer Polishing

Silicon Carbide Polishing Slurry / Silicon Carbide (SiC) Lapping Pad / SiC Final Polishing Pad

主要功能

  • Domestic Alternatives to Politex and FUJIBO Polishing Pads

产品名称

JIZHI Electronics · Silicon Carbide Polishing · Semiconductor Wafer Polishing

产品特点

JIZHI Electronics provides two-stage polishing process solutions for silicon carbide (SiC), combining different models of polishing slurries and polishing pads (rough grinding pad / fine grinding pad / rough polishing pad / fine polishing pad). This approach improves the surface quality of SiC substrates during polishing while significantly increasing the material removal rate.

Process and Applications

Suitable for SiC silicon carbide substrate DMP and CMP process flows, effectively improving efficiency and yield. The silicon carbide polishing slurries and polishing pads enable localized (domestic) replacement of imported products.

Brief Overview of the Silicon Carbide Substrate Processing Flow

Silicon Carbide (SiC) Polishing Process – Rough Polishing / Fine Polishing

Step3
JIZHI Electronics Silicon Carbide (SiC) Rough Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment double-sided36B
Wafer 6″SiC
抛光泥浆 JZ-8010
抛光垫 JZ-3020
Pressure 350g/cm2
Rotation Speed 40 rpm
Polishing Rate 2.5um/H
Surface Roughness 0.13nm
Rough Polishing Pad Dimensions and Specifications
Model JZ-3020
厚度 1.4 mm
Groove Pattern 可定制
硬度 Shore A 85°
压缩比 2.94

Step4
JIZHI Electronics Silicon Carbide (SiC) Final Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment double-sided36B
Wafer 6″SiC
抛光泥浆 JZ-8020
抛光垫 JZ-326
Pressure 300g/cm2
Rotation Speed 40 rpm
Polishing Rate 0.25um/H
Surface Roughness 0.06nm
Rough Polishing Pad Dimensions and Specifications
Model JZ-326
厚度 1.3 mm
Groove Pattern 可定制
硬度 Shore A 51°
压缩比 10.77

JIZHI Electronics’ CMP rough and final polishing process for SiC substrates

Tip 3 – Using rough polishing slurry with a lapping pad, Ra can reach 0.13 nm or lower.
Tip 4 – Using final polishing slurry with a final polishing pad, Ra can reach 0.06 nm or lower.

Recommended Products and Parameters for Silicon Carbide Grinding / Polishing Processes

Processing Method Recommended Products Removal Rate Surface Quality
抛光泥浆 抛光垫
抛光 Rough Polishing JZ-8010 JZ-3020 2.5um/H 0.13nm
Final Polishing JZ-8020A
JZ-8020B
JZ-326 0.25um/H 0.06nm

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry

Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5–35 °C, protected from direct sunlight and from freezing. If stored below 0 °C, irreversible agglomeration may occur, rendering the product unusable.

Pricing of JIZHI Electronics CMP / Slurry Polishing Liquids

JIZHI Electronics’ CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics’ polishing slurries is comparable to that of similar imported products.

Thanks to localized production, JIZHI Electronics’ CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.

为什么选择集智电子?

  • 10 年光学材料 CMP 经验

    10 年光学材料 CMP 经验

  • 抛光方案和配方可灵活定制

    无毒、可生物降解配方,符合国际环保标准。

  • 免费进程调试

    40% 的处理时间比传统方法更快a

  • 引进国外生产技术和设备

    优化的消耗率降低了总体运行成本。