Silicon Carbide Substrate Polishing

Product Features

JIZHI Electronics provides two-stage polishing process solutions for silicon carbide (SiC), combining different models of polishing slurries and polishing pads (rough grinding pad / fine grinding pad / rough polishing pad / fine polishing pad). This approach improves the surface quality of SiC substrates during polishing while significantly increasing the material removal rate.

Process and Applications

Suitable for SiC silicon carbide substrate DMP and CMP process flows, effectively improving efficiency and yield. The silicon carbide polishing slurries and polishing pads enable localized (domestic) replacement of imported products.

Brief Overview of the Silicon Carbide Substrate Processing Flow

Silicon Carbide (SiC) Polishing Process – Rough Polishing / Fine Polishing

Step3
JIZHI Electronics Silicon Carbide (SiC) Rough Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment	double-sided36B
Wafer	6″SiC
Polishing Slurry	JZ-8010
Polishing Pad	JZ-3020
Pressure	350g/cm2
Rotation Speed	40 rpm
Polishing Rate	2.5um/H
Surface Roughness	0.13nm

Rough Polishing Pad Dimensions and Specifications
Model	JZ-3020
Thickness	1.4 mm
Groove Pattern	Customizable
Hardness	Shore A 85°
Compression Ratio	2.94

Step4
JIZHI Electronics Silicon Carbide (SiC) Final Polishing Process

SiC Substrate CMP Rough Polishing Process
Verification Equipment	double-sided36B
Wafer	6″SiC
Polishing Slurry	JZ-8020
Polishing Pad	JZ-326
Pressure	300g/cm2
Rotation Speed	40 rpm
Polishing Rate	0.25um/H
Surface Roughness	0.06nm

Rough Polishing Pad Dimensions and Specifications
Model	JZ-326
Thickness	1.3 mm
Groove Pattern	Customizable
Hardness	Shore A 51°
Compression Ratio	10.77

JIZHI Electronics’ CMP rough and final polishing process for SiC substrates

Tip 3 – Using rough polishing slurry with a lapping pad, Ra can reach 0.13 nm or lower.
Tip 4 – Using final polishing slurry with a final polishing pad, Ra can reach 0.06 nm or lower.

Recommended Products and Parameters for Silicon Carbide Grinding / Polishing Processes

Storage Method for JIZHI Electronics SiC Silicon Carbide Polishing Slurry

Store in a well-ventilated, cool, and dry warehouse. The product must be stored at 5–35 °C, protected from direct sunlight and from freezing. If stored below 0 °C, irreversible agglomeration may occur, rendering the product unusable.

Pricing of JIZHI Electronics CMP / Slurry Polishing Liquids

JIZHI Electronics’ CMP metal polishing slurries are manufactured using advanced overseas production technologies and equipment and are formulated with specialized chemical compositions. The quality of JIZHI Electronics’ polishing slurries is comparable to that of similar imported products.

Thanks to localized production, JIZHI Electronics’ CMP slurries offer short delivery lead times, stable high quality, and competitive, cost-effective pricing.